发明授权
US06404014B1 Planar and densely patterned silicon-on-insulator structure 失效
平面和密集图案的绝缘体上硅结构

Planar and densely patterned silicon-on-insulator structure
摘要:
A planar silicon-on-insulator (SOI) structure and a process for fabricating the structure. The SOI structure has a silicon wafer, an oxide layer, and a silicon layer. Trenches are formed, extending from the top surface of the structure to the silicon wafer, and are filled with a semiconductor. The trenches have a top, a bottom, and side walls. The side walls have side-wall silicon portions. The side-wall silicon portions of the trench side walls are covered by trench side-wall oxide layers. A protective side wall extends over the trench side walls and trench side-wall oxide layers from the trench top to the trench bottom.
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