发明授权
- 专利标题： Laminated structure and a method of forming the same
- 专利标题（中）： 叠层结构及其形成方法
-
申请号： US09023712申请日： 1998-02-13
-
公开(公告)号： US06404021B1公开(公告)日： 2002-06-11
- 发明人: Masato Koizumi , Kazuya Okubo , Tsuyoshi Takahashi , Tsuyoshi Hashimoto , Kimihiro Matsuse
- 申请人： Masato Koizumi , Kazuya Okubo , Tsuyoshi Takahashi , Tsuyoshi Hashimoto , Kimihiro Matsuse
- 优先权： JP9-056994 19970225
- 主分类号： H01L2976
- IPC分类号： H01L2976
摘要：
A method of forming a gate electrode of a multi-layer structure includes a step of supplying a processing gas for poly-crystal film formation and impurities of a P-type into a film formation device, to form a poly-crystal silicon layer doped with P-type impurities, on a surface of a gate film target, a step of maintaining the processing target in the film formation device to prevent formation of an oxide film might not be formed on the poly-crystal silicon layer, and a step of supplying a processing gas for tungsten silicide film formation and impurities of a P-type into the film formation device, to form a tungsten silicide layer doped with impurities of P-type impurities, on the poly-crystal silicon layer on which no oxide film is formed.
信息查询
