发明授权
- 专利标题： Semiconductor memory device having a self-refresh operation
- 专利标题（中）： 具有自刷新操作的半导体存储器件
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申请号： US09791839申请日： 2001-02-26
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公开(公告)号： US06404688B2公开(公告)日： 2002-06-11
- 发明人: Yoshiaki Okuyama , Yoshitaka Takahashi , Shinya Fujioka , Akihiro Funyu
- 申请人： Yoshiaki Okuyama , Yoshitaka Takahashi , Shinya Fujioka , Akihiro Funyu
- 优先权： JP2000-054883 20000229
- 主分类号： G11C700
- IPC分类号： G11C700
摘要：
A semiconductor memory device having a self-refresh operation includes a first circuit generating a first signal that specifies a first self-refresh cycle by a non-volatile circuit element provided in the semiconductor memory device, a second circuit receiving a second signal that specifies a second self-refresh cycle via a terminal that is used in common to another signal, and a third circuit generating a pulse signal having one of the first and second self-refresh cycles, the pulse signal being related to the self-refresh operation.
公开/授权文献
- US20010017810A1 Semiconductor memory device 公开/授权日：2001-08-30
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