发明授权
US06406982B2 Method of improving epitaxially-filled trench by smoothing trench prior to filling
有权
通过在填充之前平滑沟槽来改善外延填充沟槽的方法
- 专利标题： Method of improving epitaxially-filled trench by smoothing trench prior to filling
- 专利标题（中）： 通过在填充之前平滑沟槽来改善外延填充沟槽的方法
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申请号： US09870705申请日： 2001-06-01
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公开(公告)号： US06406982B2公开(公告)日： 2002-06-18
- 发明人: Yasushi Urakami , Shoichi Yamauchi , Toshio Sakakibara , Hitoshi Yamaguchi , Nobuhiro Tsuji
- 申请人： Yasushi Urakami , Shoichi Yamauchi , Toshio Sakakibara , Hitoshi Yamaguchi , Nobuhiro Tsuji
- 优先权： JP2000-167822 20000605; JP2000-313918 20001013
- 主分类号： H01L2120
- IPC分类号： H01L2120
摘要：
A trench is formed in a semiconductor substrate through a mask composed of a silicon oxide film formed on the semiconductor substrate. Then, an edge portion at an opening portion of the mask is etched so that an opening width thereof is wider than that of the trench. After that, an inner surface of the trench is smoothed by thermal treatment around at 1000° C. in non-oxidizing or non-nitriding atmosphere under low pressure. Then, the trench is filled with an epitaxial film. After that, the epitaxial film is polished, whereby a semiconductor substrate for forming a semiconductor device is obtained.
公开/授权文献
- US20010049182A1 Manufacturing method of semiconductor substrate 公开/授权日：2001-12-06
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