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公开(公告)号：US09051663B2
公开(公告)日：2015-06-09
申请号：US13305019
申请日：2011-11-28
申请人： Yasushi Urakami , Ayumu Adachi , Itaru Gunjishima
发明人： Yasushi Urakami , Ayumu Adachi , Itaru Gunjishima
CPC分类号： C30B29/36 , C30B23/00 , C30B23/025 , H01L29/1608
摘要： A manufacturing method of a SiC single crystal includes a first growth process and a re-growth process. In the first growth process, a first seed crystal made of SiC is used to grow a first SiC single crystal. In the re-growth process, a plurality of growth steps is performed for (n−1) times. In a k-th growth step, a k-th seed crystal is cut out from a grown (k−1)-th SiC single crystal, and the k-th seed crystal is used to grow a k-th SiC single crystal (n≧2 and 2≦k≦n). When an offset angle of a growth surface of the k-th seed crystal is defined as θk, at least in one of the plurality of growth steps, the offset angle θk is smaller than the offset angle θk-1.
摘要翻译： SiC单晶的制造方法包括第一生长工序和再生长工序。 在第一生长过程中，使用由SiC制成的第一晶种来生长第一SiC单晶。 在再生长过程中，进行多次生长步骤（n-1次）。 在第k个生长步骤中，从生长的（k-1）SiC单晶中切出第k个晶种，并且将第k个晶种用于生长第k个SiC单晶（ n≥2和2＆nlE; k＆nlE; n）。 当第k种子晶体的生长表面的偏移角被定义为＆amp; k时，至少在多个生长步骤中的一个中，偏移角度θ小于偏移角度θ-k 。
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2.发明申请SiC SINGLE CRYSTAL, PRODUCTION METHOD THEREFOR, SiC WAFER AND SEMICONDUCTOR DEVICE 有权SiC单晶，其制造方法，SiC波导和半导体器件公开(公告)号：US20140091325A1
公开(公告)日：2014-04-03
申请号：US14119710
申请日：2012-06-04
申请人： Itaru Gunjishima , Keisuke Shigetoh , Yasushi Urakami , Masanori Yamada , Ayumu Adachi , Masakazu Kobayashi
发明人： Itaru Gunjishima , Keisuke Shigetoh , Yasushi Urakami , Masanori Yamada , Ayumu Adachi , Masakazu Kobayashi
CPC分类号： C30B23/025 , C30B23/005 , C30B29/36 , H01L21/02378 , H01L21/0243 , H01L21/02433 , H01L21/02529 , H01L21/02587 , H01L21/02609 , H01L29/1608 , Y10T428/21
摘要： When an SiC single crystal having a large diameter of a {0001} plane is produced by repeating a-plane growth, the a-plane growth of the SiC single crystal is carried out so that a ratio Sfacet (=S1×100/S2) of an area (S1) of a Si-plane side facet region to a total area (S2) of the growth plane is maintained at 20% or less.
摘要翻译： 当通过重复a面生长产生具有{0001}面大直径的SiC单晶时，进行SiC单晶的a面生长，使得Sfacet（= S1×100 / S2） 的Si平面侧面面积（S1）与生长面的总面积（S2）保持在20％以下。
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公开(公告)号：US20120132132A1
公开(公告)日：2012-05-31
申请号：US13305019
申请日：2011-11-28
申请人： Yasushi Urakami , Ayumu Adachi , Itaru Gunjishima
发明人： Yasushi Urakami , Ayumu Adachi , Itaru Gunjishima
IPC分类号： C30B23/02
CPC分类号： C30B29/36 , C30B23/00 , C30B23/025 , H01L29/1608
摘要： A manufacturing method of a SiC single crystal includes a first growth process and a re-growth process. In the first growth process, a first seed crystal made of SiC is used to grow a first SiC single crystal. In the re-growth process, a plurality of growth steps is performed for (n−1) times. In a k-th growth step, a k-th seed crystal is cut out from a grown (k−1)-th SiC single crystal, and the k-th seed crystal is used to grow a k-th SiC single crystal (n≧2 and 2≦k≦n). When an offset angle of a growth surface of the k-th seed crystal is defined as θk, at least in one of the plurality of growth steps, the offset angle θk is smaller than the offset angle θk−1.
摘要翻译： SiC单晶的制造方法包括第一生长工序和再生长工序。 在第一生长过程中，使用由SiC制成的第一晶种来生长第一SiC单晶。 在再生长过程中，进行多次生长步骤（n-1次）。 在第k个生长步骤中，从生长的（k-1）SiC单晶中切出第k个晶种，并且将第k个晶种用于生长第k个SiC单晶（ n≥2和2＆nlE; k＆nlE; n）。 当第k种子晶体的生长表面的偏移角被定义为＆amp; k时，至少在多个生长步骤中的一个中，偏移角度θ小于偏移角度θ-k 。
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公开(公告)号：US20090032965A1
公开(公告)日：2009-02-05
申请号：US12216808
申请日：2008-07-10
IPC分类号： H01L23/48
CPC分类号： H01L29/7813 , H01L29/0615 , H01L29/0619 , H01L29/0634 , H01L29/0638 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/41741 , H01L29/7811 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a first semiconductor layer; a p-n column portion over the first semiconductor layer and including second and third semiconductor layers, which are alternately arranged; and a peripheral portion adjacently to the p-n column portion and including a fourth semiconductor layer. An end second semiconductor layer has an impurity amount equal to or larger than a half of other second semiconductor layers. The third semiconductor layers include a large impurity amount portion adjacent to the end second semiconductor layer. The large impurity amount portion includes at least one third semiconductor layer having an impurity amount larger than an impurity amount of other third semiconductor layers.
摘要翻译： 一种半导体器件包括：第一半导体层; 在第一半导体层上的p-n列部分，并且包括交替布置的第二和第三半导体层; 以及与p-n列部分相邻并包括第四半导体层的周边部分。 端部第二半导体层的杂质量等于或大于其它第二半导体层的一半。 第三半导体层包括与端部第二半导体层相邻的大杂质量部分。 大杂质量部分包括杂质量大于其它第三半导体层的杂质量的至少一个第三半导体层。
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公开(公告)号：US20120073495A1
公开(公告)日：2012-03-29
申请号：US13245934
申请日：2011-09-27
申请人： Yasushi URAKAMI , Ayumu Adachi , Itaru Gunjishima
发明人： Yasushi URAKAMI , Ayumu Adachi , Itaru Gunjishima
IPC分类号： C30B23/02
摘要： In a manufacturing method of a silicon carbide single crystal, a seed crystal made of silicon carbide is prepared. The seed crystal has a growth surface and a stacking fault generation region and includes a threading dislocation that reaches the growth surface. The growth surface is inclined at a predetermined angle from a (0001) plane. The stacking fault generation region is configured to cause a stacking fault in the silicon carbide single crystal when the silicon carbide single crystal is grown. The stacking fault generation region is located at an end portion of the growth surface in an offset direction that is a direction of a vector defined by projecting a normal vector of the (0001) plane onto the growth surface. The seed crystal is joined to a pedestal, and the silicon carbide single crystal is grown on the growth surface of the seed crystal.
摘要翻译： 在碳化硅单晶的制造方法中，制备由碳化硅制成的晶种。 籽晶具有生长面和堆垛层错产生区域，并且包括到达生长表面的穿透位错。 生长面从（0001）面向预定角度倾斜。 当生长碳化硅单晶时，层叠故障产生区被配置为引起碳化硅单晶中的堆垛错误。 层叠故障产生区域位于生长表面的端部，该偏移方向是通过将（0001）面的法线向量投影到生长面上而限定的矢量的方向。 晶种与基座接合，并且在晶种的生长面上生长碳化硅单晶。
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公开(公告)号：US20120060751A1
公开(公告)日：2012-03-15
申请号：US13210513
申请日：2011-08-16
申请人： Yasushi URAKAMI , Itaru GUNJISHIMA , Ayumu ADACHI
发明人： Yasushi URAKAMI , Itaru GUNJISHIMA , Ayumu ADACHI
IPC分类号： C30B23/02
CPC分类号： C30B29/36 , C30B23/00 , C30B23/002 , H01L29/1608
摘要： A manufacturing method of a SiC single crystal includes growing a SiC single crystal on a surface of a SiC seed crystal, which satisfies following conditions: (i) the SiC seed crystal includes a main growth surface composed of a plurality of sub-growth surfaces; (ii) among directions from an uppermost portion of a {0001} plane on the main growth surface to portions on a periphery of the main growth surface, the SiC seed crystal has a main direction in which a plurality of sub-growth surfaces is arranged; and (iii) an offset angle θk of a k-th sub-growth surface and an offset angle θk+1 of a (k+1)-th sub-growth surface satisfy a relationship of θk
摘要翻译： SiC单晶的制造方法包括在SiC晶种的表面上生长SiC单晶，满足以下条件：（i）SiC晶种包括由多个次生长面构成的主生长面; （ii）从主生长面上的{0001}面的最上部到主生长面的周围的部分的方向之间，SiC晶种具有多个次生长面配置的主方向 ; 和（iii）第（k + 1）次生长表面的第k个次生长表面的偏移角和角度k和偏移角θk满足关系式;＆lt; k＆ ; k + 1。
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公开(公告)号：US07838995B2
公开(公告)日：2010-11-23
申请号：US12216808
申请日：2008-07-10
IPC分类号： H01L23/48
CPC分类号： H01L29/7813 , H01L29/0615 , H01L29/0619 , H01L29/0634 , H01L29/0638 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/41741 , H01L29/7811 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a first semiconductor layer; a p-n column portion over the first semiconductor layer and including second and third semiconductor layers, which are alternately arranged; and a peripheral portion adjacently to the p-n column portion and including a fourth semiconductor layer. An end second semiconductor layer has an impurity amount equal to or larger than a half of other second semiconductor layers. The third semiconductor layers include a large impurity amount portion adjacent to the end second semiconductor layer. The large impurity amount portion includes at least one third semiconductor layer having an impurity amount larger than an impurity amount of other third semiconductor layers.
摘要翻译： 一种半导体器件包括：第一半导体层; 在第一半导体层上的p-n列部分，并且包括交替布置的第二和第三半导体层; 以及与p-n列部分相邻并包括第四半导体层的周边部分。 端部第二半导体层的杂质量等于或大于其它第二半导体层的一半。 第三半导体层包括与端部第二半导体层相邻的大杂质量部分。 大杂质量部分包括杂质量大于其它第三半导体层的杂质量的至少一个第三半导体层。
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公开(公告)号：US06495883B2
公开(公告)日：2002-12-17
申请号：US10060379
申请日：2002-02-01
IPC分类号： H01L2976
CPC分类号： H01L29/7813 , H01L29/045 , H01L29/4232 , H01L29/42368 , H01L29/4238
摘要： A semiconductor device has a dielectric strength for a gate oxide film at a trench bottom that is higher than that of side walls used for channels. An n+0 type substrate 1 having substrate plane orientation of (110) is prepared, and the side walls of a trench where channels are formed are in (100) planes. The other, non-channel forming, side walls of the trench are in (110) planes. Thus, the growth rate of the gate oxide film 7 in the non-channel forming side walls and the trench bottom is faster than that in the channel forming side walls. As a result, the film thickness at the non-channel-forming side walls and the trench bottom is greater than that of the channel-forming side walls. Accordingly, the device has high mobility, and there is no drop of dielectric strength due to partial reduction of the thickness of the gate oxide film 7. This achieves both a reduction of the ON resistance and an increase in the dielectric strength of the semiconductor device.
摘要翻译： 半导体器件在沟槽底部具有比用于沟道的侧壁高的栅极氧化膜的介电强度。 制备具有（110）基板平面取向的n + 0型基板1，并且形成通道的沟槽的侧壁在（100）平面中。 沟槽的另一个非通道形成侧壁在（110）平面中。 因此，非通道形成侧壁和沟槽底部中的栅极氧化膜7的生长速度比形成沟道的侧壁的生长速度快。 结果，在非沟道形成侧壁和沟槽底部处的膜厚度大于沟道形成侧壁的膜厚度。 因此，器件具有高迁移率，并且由于栅极氧化膜7的厚度的部分减小而不会降低介电强度。这实现了导通电阻的降低和半导体器件的介电强度的增加 。
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公开(公告)号：US09166008B2
公开(公告)日：2015-10-20
申请号：US14110574
申请日：2012-05-16
申请人： Itaru Gunjishima , Yasushi Urakami , Ayumu Adachi
发明人： Itaru Gunjishima , Yasushi Urakami , Ayumu Adachi
IPC分类号： H01L31/0312 , H01L29/30 , H01L29/04 , H01L29/16 , C30B23/02 , C30B29/36 , H01L29/32 , H01L29/861 , H01L21/02
CPC分类号： H01L29/30 , C30B23/025 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0254 , H01L29/045 , H01L29/1608 , H01L29/32 , H01L29/861
摘要： An SiC single crystal having at least one orientation region where a basal plane dislocation has a high linearity and is oriented to three crystallographically-equivalent directions, and an SiC wafer and a semiconductor device which are manufactured from the SiC single crystal. The SiC single crystal can be manufactured by using a seed crystal in which the offset angle on a {0001} plane uppermost part side is small and the offset angle on an offset direction downstream side is large and growing another crystal on the seed crystal.
摘要翻译： 具有至少一个取向区域的SiC单晶，其中基面位错具有高线性度并且取向为三个晶体上等同的<11-20>方向，以及由SiC单晶制造的SiC晶片和半导体器件 。 SiC单晶可以通过使用其中{0001}平面最上部分侧的偏移角小并且偏移方向下游侧的偏移角大并且在晶种上生长另一晶体的晶种来制造。
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公开(公告)号：US09145622B2
公开(公告)日：2015-09-29
申请号：US13245934
申请日：2011-09-27
申请人： Yasushi Urakami , Ayumu Adachi , Itaru Gunjishima
发明人： Yasushi Urakami , Ayumu Adachi , Itaru Gunjishima
摘要： In a manufacturing method of a silicon carbide single crystal, a seed crystal made of silicon carbide is prepared. The seed crystal has a growth surface and a stacking fault generation region and includes a threading dislocation that reaches the growth surface. The growth surface is inclined at a predetermined angle from a (0001) plane. The stacking fault generation region is configured to cause a stacking fault in the silicon carbide single crystal when the silicon carbide single crystal is grown. The stacking fault generation region is located at an end portion of the growth surface in an offset direction that is a direction of a vector defined by projecting a normal vector of the (0001) plane onto the growth surface. The seed crystal is joined to a pedestal, and the silicon carbide single crystal is grown on the growth surface of the seed crystal.
摘要翻译： 在碳化硅单晶的制造方法中，制备由碳化硅制成的晶种。 籽晶具有生长面和堆垛层错产生区域，并且包括到达生长表面的穿透位错。 生长面从（0001）面向预定角度倾斜。 当生长碳化硅单晶时，层叠故障产生区被配置为引起碳化硅单晶中的堆垛错误。 层叠故障产生区域位于生长表面的端部，该偏移方向是通过将（0001）面的法线向量投影到生长面上而限定的矢量的方向。 晶种与基座接合，并且在晶种的生长面上生长碳化硅单晶。
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