- 专利标题: Pattern inspecting system and pattern inspecting method
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申请号: US09764450申请日: 2001-01-19
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公开(公告)号: US06407808B2公开(公告)日: 2002-06-18
- 发明人: Haruo Yoda , Mari Nozoe
- 申请人: Haruo Yoda , Mari Nozoe
- 优先权: JP9-179305 19970704
- 主分类号: G01N2100
- IPC分类号: G01N2100
摘要:
A visual reinspection of circuit patterns using a reviewing apparatus is omitted from a semiconductor circuit pattern forming process to achieve the minute analysis of detected defects in the circuit patterns quickly. A fast pattern inspecting system comprises a calculating means for calculating the graphical characteristic quantities of the defects in synchronism with the detection of the defects, and a classifying means for classifying the defects in clusters by the calculated characteristic quantities.
公开/授权文献
- US20010009461A1 Pattern inspecting system and pattern inspecting method 公开/授权日:2001-07-26
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