发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US09370990申请日： 1999-08-10
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公开(公告)号： US06410978B1公开(公告)日： 2002-06-25
- 发明人: Akio Yasukawa , Hirohisa Yamamura , Tatsuya Shigemura
- 申请人： Akio Yasukawa , Hirohisa Yamamura , Tatsuya Shigemura
- 主分类号： H01L2334
- IPC分类号： H01L2334
摘要：
A semiconductor device in which fatigue failure of a solder layer underneath a semiconductor chip mounted on a base can be prevented from occurring due to repetitions of turn-on and -off of power during operation thereof, is provided, that is, a recess is formed in the base in a part underneath the semiconductor chip so as to prevent occurrence of thermal expansion in the base.
公开/授权文献
- US20020050403A1 SEMICONDUCTOR DEVICE 公开/授权日：2002-05-02
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