A through hole passes through an interlayer isolation film and an antireflection film, to partially expose a surface of a first wiring layer. A clearance filling member fills up a clearance under an inner edge of the antireflection film. A barrier metal film continuously covers the exposed surface of the first wiring layer, an inner wall surface of the through hole and a surface of the interlayer isolation film. Passing through the through hole, a second wiring layer is connected with the first wiring layer through the barrier metal film. Thus provided is a method of fabricating a semiconductor device improved to be capable of avoiding disconnection of a wire in a through hole.