公开(公告)号：US06414395B1

公开(公告)日：2002-07-02

申请号：US09398475

申请日：1999-09-17

申请人： Yuuko Ookuma ,  Kimio Hagi

发明人： Yuuko Ookuma ,  Kimio Hagi

IPC分类号： H01L2348

CPC分类号： H01L21/76805 ,  H01L21/76804 ,  H01L21/76831

摘要： A through hole passes through an interlayer isolation film and an antireflection film, to partially expose a surface of a first wiring layer. A clearance filling member fills up a clearance under an inner edge of the antireflection film. A barrier metal film continuously covers the exposed surface of the first wiring layer, an inner wall surface of the through hole and a surface of the interlayer isolation film. Passing through the through hole, a second wiring layer is connected with the first wiring layer through the barrier metal film. Thus provided is a method of fabricating a semiconductor device improved to be capable of avoiding disconnection of a wire in a through hole.

摘要翻译： 通孔穿过层间隔离膜和抗反射膜，以部分地暴露第一布线层的表面。 间隙填充构件在防反射膜的内缘下方填充间隙。 阻挡金属膜连续地覆盖第一布线层的露出表面，通孔的内壁表面和层间隔离膜的表面。 通过通孔，第二布线层通过阻挡金属膜与第一布线层连接。 因此，提供了一种制造半导体器件的方法，该半导体器件被改进以能够避免导线在通孔中断开。