发明授权
US06417531B1 Charge transfer device with final potential well close to floating diffusion region
失效
具有最终电势的电荷转移装置,靠近浮动扩散区
- 专利标题: Charge transfer device with final potential well close to floating diffusion region
- 专利标题(中): 具有最终电势的电荷转移装置,靠近浮动扩散区
-
申请号: US09427977申请日: 1999-10-27
-
公开(公告)号: US06417531B1公开(公告)日: 2002-07-09
- 发明人: Yasutaka Nakashiba
- 申请人: Yasutaka Nakashiba
- 优先权: JP10-332777 19981124
- 主分类号: H01L29768
- IPC分类号: H01L29768
摘要:
A charge transfer device has a charge transfer region under charge transfer electrodes for stepwise conveying charge packets through potential wells to a floating diffusion region, and the charge transfer region has a boundary sub-region contracting toward the floating diffusion region, wherein the final potential well is created at a certain portion in said boundary sub-region close to the floating diffusion region so that each charge packet travels over a short distance, thereby enhancing a charge transfer efficiency.
信息查询