发明授权
US06417531B1 Charge transfer device with final potential well close to floating diffusion region 失效
具有最终电势的电荷转移装置,靠近浮动扩散区

  • 专利标题: Charge transfer device with final potential well close to floating diffusion region
  • 专利标题(中): 具有最终电势的电荷转移装置,靠近浮动扩散区
  • 申请号: US09427977
    申请日: 1999-10-27
  • 公开(公告)号: US06417531B1
    公开(公告)日: 2002-07-09
  • 发明人: Yasutaka Nakashiba
  • 申请人: Yasutaka Nakashiba
  • 优先权: JP10-332777 19981124
  • 主分类号: H01L29768
  • IPC分类号: H01L29768
Charge transfer device with final potential well close to floating diffusion region
摘要:
A charge transfer device has a charge transfer region under charge transfer electrodes for stepwise conveying charge packets through potential wells to a floating diffusion region, and the charge transfer region has a boundary sub-region contracting toward the floating diffusion region, wherein the final potential well is created at a certain portion in said boundary sub-region close to the floating diffusion region so that each charge packet travels over a short distance, thereby enhancing a charge transfer efficiency.
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