公开(公告)号：US06518605B1

公开(公告)日：2003-02-11

申请号：US09770188

申请日：2001-01-29

申请人： Keisuke Hatano ,  Masayuki Furumiya ,  Toru Kawasaki

发明人： Keisuke Hatano ,  Masayuki Furumiya ,  Toru Kawasaki

IPC分类号： H01L29768

CPC分类号： H01L27/14603 ,  H01L27/14692

摘要： A solid state imaging pickup device with a single-layer electrode structure which eliminates the release area at the terminal part of the charge transfer electrodes by surrounding the charge transfer electrodes with a dummy pattern, or with a pattern formed by connecting the charge transfer electrodes of a certain phase with each other at the outermost periphery. Surrounding the charge transfer electrode improves embedding performance when an insulating film is re-flowed for flattening inter-electrode gaps. This enables formation of a good metal wire or shielding film with no step-cut, thus improving the reliability of a solid state imaging pickup device.

摘要翻译： 一种具有单层电极结构的固态成像拾取装置，其通过用虚拟图案围绕电荷转移电极或通过连接电荷转移电极形成的图案来消除电荷转移电极的末端部分处的释放区域 在最外周彼此相邻。 围绕电荷转移电极，当绝缘膜被再流动以使平板化的电极间间隙时，可提高嵌入性能。 这样可以形成没有阶梯切割的良好的金属线或屏蔽膜，从而提高了固态成像拾取装置的可靠性。

公开(公告)号：US06417531B1

公开(公告)日：2002-07-09

申请号：US09427977

申请日：1999-10-27

申请人： Yasutaka Nakashiba

发明人： Yasutaka Nakashiba

IPC分类号： H01L29768

CPC分类号： H01L29/76816 ,  H01L27/14698 ,  H01L27/14806 ,  Y10S257/912

摘要： A charge transfer device has a charge transfer region under charge transfer electrodes for stepwise conveying charge packets through potential wells to a floating diffusion region, and the charge transfer region has a boundary sub-region contracting toward the floating diffusion region, wherein the final potential well is created at a certain portion in said boundary sub-region close to the floating diffusion region so that each charge packet travels over a short distance, thereby enhancing a charge transfer efficiency.

摘要翻译： 电荷转移装置在电荷转移电极下方具有电荷转移区域，用于通过势阱将电荷分段逐步输送到浮动扩散区域，并且电荷转移区域具有向浮动扩散区域收缩的边界子区域，其中最终势阱 在靠近浮动扩散区域的边界子区域的特定部分处产生，使得每个电荷包在短距离上行进，从而提高电荷转移效率。

公开(公告)号：US06355949B1

公开(公告)日：2002-03-12

申请号：US09455403

申请日：1999-12-06

申请人： Shinichi Kawai

发明人： Shinichi Kawai

IPC分类号： H01L29768

CPC分类号： H01L27/14843 ,  H01L27/14806 ,  H04N5/347 ,  H04N5/372 ,  H04N5/3728

摘要： A charge transfer structure includes an insulating film on a first semiconductor region, a plurality of transfer electrodes and a signal generating circuit. The plurality of transfer electrodes are formed on the insulating film, and each of the plurality of transfer electrodes is composed of a barrier electrode and an accumulation electrode. The signal generating circuit generates first to 2N-th (N is a positive integer more than 1) pulse signals which are supplied to every 2N transfer electrodes of the plurality of transfer electrodes in an interline mode. As a result, a signal charge can be transferred for the 2N transfer electrodes at maximum during one cycle of the first to 2N-th pulse signals.

摘要翻译： 电荷转移结构包括在第一半导体区域上的绝缘膜，多个转移电极和信号发生电路。 多个传输电极形成在绝缘膜上，多个传输电极中的每一个由阻挡电极和累积电极组成。 信号发生电路以行间模式产生提供给多个转移电极的每2N个转移电极的第一至第2N（N为大于1的正整数）脉冲信号。 结果，在第一至第2N脉冲信号的一个周期期间，可以最大限度地传送2N转移电极的信号电荷。

公开(公告)号：US06191440B1

公开(公告)日：2001-02-20

申请号：US09108407

申请日：1998-07-01

申请人： Nobuhiko Mutoh ,  Takashi Nakano

发明人： Nobuhiko Mutoh ,  Takashi Nakano

IPC分类号： H01L29768

CPC分类号： H01L29/42396 ,  H01L29/76816

摘要： In a charge transfer device, a floating gate is provided in an insulating film which is provided on a charge transfer channel layer. A buffer amplifier is connected with the floating gate, and detects signal charges in the charge transfer channel layer to generate a signal indicative of an output voltage corresponding to the signal charges. A bias gate is provided in the insulating film apart from the floating gate to cover at least a part of the floating gate. A bias applying unit applies a bias voltage to the bias gate in response to the output voltage signal such that an alternate current (AC) component of a voltage of the floating gate is substantially equal to an AC component of a voltage of the bias gate.

摘要翻译： 在电荷转移装置中，浮置栅极设置在设置在电荷传输沟道层上的绝缘膜中。 缓冲放大器与浮动栅极连接，并检测电荷传输沟道层中的信号电荷，以产生指示对应于信号电荷的输出电压的信号。 偏置栅极设置在绝缘膜中，与浮动栅极分开以覆盖至少一部分浮动栅极。 偏置施加单元响应于输出电压信号将偏置电压施加到偏置栅极，使得浮置栅极的电压的交流电（AC）分量基本上等于偏置栅极的电压的AC分量。

公开(公告)号：US06504188B1

公开(公告)日：2003-01-07

申请号：US09708811

申请日：2000-11-08

申请人： Yasushi Maruyama ,  Dai Sugimoto

发明人： Yasushi Maruyama ,  Dai Sugimoto

IPC分类号： H01L29768

CPC分类号： H01L27/14812 ,  H01L27/14627 ,  H01L27/14843

摘要： A solid image pickup device that can be operated at high speed and can suppress the dark current with high sensitivity, and a process for producing the same are provided. The solid image pickup device comprises a shunt wiring layers 7a and 7d of the transfer electrodes are formed with an accumulated film of a high melting point metal 13 and a nitride or an oxide of a high melting point metal 14. The solid image pickup device is produced by the process comprising a step of forming, on transfer electrodes 3a and 4b, shunt wiring layers 7a and 7d comprising an accumulated film comprising a nitride layer or an oxide layer of a high melting point metal 14 having a high melting point metal layer 13 formed thereon, and a step of conducting, after forming a dielectric film 36 to have a concave part on a sensor 2, a heat treatment at a temperature of from 800 to 900° C.

摘要翻译： 提供可以高速操作并且可以高灵敏度地抑制暗电流的固体图像拾取装置及其制造方法。 固体摄像装置包括转印电极的分流布线层7a和7d，其形成有高熔点金属13的积聚膜和高熔点金属14的氮化物或氧化物。固体图像拾取装置是 该方法包括在转移电极3a和4b上形成分流布线层7a和7d的步骤，该布线层7a和7d包括含有氮化物层或具有高熔点金属层13的高熔点金属14的氧化物层的积聚膜 形成在其上的步骤，以及在形成介电膜36以在传感器2上具有凹形部分之后，在800-900℃的温度下进行热处理的步骤。

公开(公告)号：US06207981B1

公开(公告)日：2001-03-27

申请号：US09187844

申请日：1998-11-06

申请人： Keisuke Hatano ,  Yasutaka Nakashiba

发明人： Keisuke Hatano ,  Yasutaka Nakashiba

IPC分类号： H01L29768

CPC分类号： H01L29/1062 ,  H01L27/14806 ,  H01L29/76841

摘要： A two-phase, single-ply-electrode type charge-coupled device is provided that has a pair of a potential barrier region and a charge storage region underlying one charge transfer electrode. The charge storage region is formed in such a manner that the potential of the charge storage region becomes gradually deep in charge transfer direction. This structure enables smooth charge transfer.

摘要翻译： 提供两相单层电极型电荷耦合器件，其具有一对势垒区域和一个电荷转移电极下面的电荷存储区域。 电荷存储区域形成为电荷存储区域的电位在电荷转移方向上逐渐变深。 这种结构能够平稳地进行电荷转移。

公开(公告)号：US06201268B1

公开(公告)日：2001-03-13

申请号：US08484379

申请日：1995-06-07

申请人： Yasutaka Nakashiba

发明人： Yasutaka Nakashiba

IPC分类号： H01L29768

CPC分类号： G11C19/285 ,  H01L29/76816

摘要： A charge-coupled device has a first P-type well layer which forms a charge transfer section and a second P-type well layer which forms a floating diffusion layer section and within which the first P-type well layer is formed. The second P-type well layer below the floating diffusion layer section has an impurity concentration lower than that of the first P-type well layer whereby a depletion layer formed therein by a PN-junction flares in the direction to the second P-type well layer. With this arrangement, it is made possible to reduce the floating diffusion capacitance and to maintain a large output voltage with respect to a signal electron charge.

摘要翻译： 电荷耦合器件具有形成电荷转移部分的第一P型阱层和形成浮动扩散层部分的第二P型阱层，并且其中形成有第一P型阱层。 浮动扩散层部分下面的第二P型阱层的杂质浓度低于第一P型阱层的杂质浓度，由此通过PN结形成的耗尽层在朝向第二P型阱的方向上扩张 层。 利用这种布置，可以减小浮动扩散电容并且相对于信号电子电荷维持大的输出电压。

公开(公告)号：US06828607B1

公开(公告)日：2004-12-07

申请号：US10315458

申请日：2002-12-09

申请人： Mario M. Pelella ,  Amy C. Tu ,  Richard K. Klein

发明人： Mario M. Pelella ,  Amy C. Tu ,  Richard K. Klein

IPC分类号： H01L29768

CPC分类号： H01L21/76897 ,  H01L21/76831 ,  H01L23/485 ,  H01L27/115 ,  H01L27/11521 ,  H01L2924/0002 ,  H01L2924/00

摘要： A multiple independent bit Flash memory cell has a gate that includes a first oxide layer, a discontinuous nitride layer on the first oxide layer, a second oxide layer on the discontinuous nitride layer and the first oxide layer, and a polysilicon layer on the second oxide layer. The discontinuous nitride layer has regions residing at different portions of the layer. These portions are separated by the second oxide layer. Thus, with a smaller channel length, charge that otherwise would migrate from one region to the other and/or strongly influence its neighboring it is blocked/impeded by the second oxide layer. In this manner, the potential for charge sharing between the regions is reduced, and a higher density chip multiple independent bit Flash memory cells may be provided.

摘要翻译： 多独立位闪存单元具有栅极，该栅极包括第一氧化物层，第一氧化物层上的不连续氮化物层，不连续氮化物层上的第二氧化物层和第一氧化物层，以及在第二氧化物层上的多晶硅层 层。 不连续的氮化物层具有位于该层的不同部分的区域。 这些部分被第二氧化物层分离。 因此，具有较小的通道长度，否则会从一个区域迁移到另一个区域的电荷和/或强烈影响其邻近的电荷被第二氧化物层阻挡/阻碍。 以这种方式，减小了区域之间的电荷共享的可能性，并且可以提供更高密度的芯片多个独立的位闪存单元。

公开(公告)号：US06777725B2

公开(公告)日：2004-08-17

申请号：US10171643

申请日：2002-06-14

申请人： Josef Willer ,  Herbert Palm

发明人： Josef Willer ,  Herbert Palm

IPC分类号： H01L29768

CPC分类号： H01L27/11568 ,  H01L27/115

摘要： An integrated memory circuit of the type of an NROM memory includes recessed bit lines formed of a material having a low ohmic resistance. By recessing the bit lines with respect to the semiconductor substrate surface of a peripheral controlling circuit for an array of memory cells allows to form the word line lithography on a perfect or almost perfect plane so that the word line formation results in a production with higher yield and, therefore, lower costs for the individual integrated memory circuit.

摘要翻译： NROM存储器类型的集成存储器电路包括由具有低欧姆电阻的材料形成的凹陷位线。 通过将相对于用于存储单元阵列的外围控制电路的半导体衬底表面的位线凹进，可以在完美或几乎完美的平面上形成字线光刻，使得字线形成导致具有更高产量的生产 因此，单个集成存储器电路的成本较低。

公开(公告)号：US06483132B2

公开(公告)日：2002-11-19

申请号：US09825936

申请日：2001-04-05

申请人： Yukiya Kawakami

发明人： Yukiya Kawakami

IPC分类号： H01L29768

CPC分类号： H01L27/1485 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/14812

摘要： A charge coupled device including: a substrate; a semiconductor layer overlying the substrate; a semiconductor layer overlying the semiconductor layer; a charge storage layer existing on the semiconductor layer and sandwiched by a pair of isolation regions; an impurity region between the semiconductor layer and the charge storage layer; a dielectric film overlying the charge storage layer and the isolation regions, and an electrode formed by a conductive film. In accordance with the present invention, the increase of the amount of the charge storage and of the higher photosensitivity can be simultaneously satisfied. The fluctuation of the characteristics of the charge coupled device in accordance with the present invention is smaller than that of the conventional charge coupled device. Further, the method of the fabrication is less complicated than that for the conventional charge coupled device.

摘要翻译： 一种电荷耦合器件，包括：衬底; 覆盖衬底的半导体层; 覆盖半导体层的半导体层; 存在于半导体层上并被一对隔离区夹持的电荷存储层; 半导体层和电荷存储层之间的杂质区域; 覆盖电荷存储层和隔离区域的电介质膜，以及由导电膜形成的电极。 根据本发明，可以同时满足电荷存储量的增加和较高的光敏性的增加。 根据本发明的电荷耦合器件的特性的波动小于常规电荷耦合器件的特性波动。 此外，制造方法比常规电荷耦合器件的方法不复杂。