Invention Grant
US06418075B2 Semiconductor merged logic and memory capable of preventing an increase in an abnormal current during power-up 失效
半导体合并逻辑和存储器能够防止上电期间异常电流的增加

Semiconductor merged logic and memory capable of preventing an increase in an abnormal current during power-up
Abstract:
A semiconductor integrated circuit in which a logic and a memory are merged, includes a voltage generation unit for generating two or more internal power supply voltages based on two or more external power supply voltages supplied from outside the voltage generation unit with different timings and for furnishing the plurality of internal power supply voltages to the memory. The voltage generation unit includes a standby unit with a small current-feed ability that is always activated, for generating the plurality of internal power supply voltages, and an active unit with a large current-feed ability that is activated as needed, for generating the plurality of internal power supply voltages. An activation control unit prevents the active unit from being activated until all of the plurality of external power supply voltages rise.
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