发明授权
- 专利标题： Method of making multilayered substrate for semiconductor device
- 专利标题（中）： 制造半导体器件用多层基板的方法
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申请号： US09523149申请日： 2000-03-10
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公开(公告)号： US06418615B1公开(公告)日： 2002-07-16
- 发明人: Akio Rokugawa , Masayuki Sasaki , Yuichi Matsuda
- 申请人： Akio Rokugawa , Masayuki Sasaki , Yuichi Matsuda
- 优先权： JP11-064248 19990311; JP11-370984 19991227
- 主分类号： H01K310
- IPC分类号： H01K310
摘要：
A substrate of multilayered structure having a plurality of sets of an insulation layer and a wiring line layer, and having one face for mounting a semiconductor element thereon and the other face on which external connection terminals are to be provided, the face for mounting a semiconductor element being provided with pads to be bonded to an electrode terminal of the semiconductor element, the other face being provided with pads to be bonded to an external connection terminal, such as a terminal formed of a solder ball, and the wiring line layers on both sides of an insulation layer being connected with each other by vias piercing the insulation layer, wherein the surfaces of the pads to be bonded to an electrode terminal of a semiconductor element are flat and are in the same plane. A method of manufacturing such a multilayered substrate is also disclosed.
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