An integrated RF power amplifier 20 includes an on-chip input transformer (24) and an on-chip output transformer (28). Each of the transformers (24, 28) is formed from four spirals. Each primary winding (34, 42) and each secondary winding (38, 44) includes positive and negative spirals arranged so that positive current rotates in opposing rotational directions in the positive and negative spirals. The secondary winding (38) of the input transformer (24) and the primary winding (42) of the output transformer (28) each has a center tap (48, 50) located at the electrical and physical center of the winding. Positive and negative amplifiers (26) couple between the secondary winding of the input transformer (24) and the primary winding of the output transformer (28). DC biasing for the amplifiers (26) is provided through the positive and negative spirals of the center-tapped windings (38, 42) from the respective center taps (48, 50).