Invention Grant
- Patent Title: Method of making field emitters using porous silicon
- Patent Title (中): 使用多孔硅制造场致发射体的方法
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Application No.: US09782396Application Date: 2001-02-13
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Publication No.: US06426234B2Publication Date: 2002-07-30
- Inventor: Terry L. Gilton
- Applicant: Terry L. Gilton
- Main IPC: H01L2100
- IPC: H01L2100

Abstract:
A process is provided for forming sharp asperities useful as field emitters. The process comprises patterning and doping a silicon substrate. The doped silicon substrate is anodized. The anodized area is then use for field emission tips. The process of the present invention is also useful for low temperature sharpening of tips fabricated by other methods. The tips are anodized, and then exposed to radiant energy and the resulting oxide is removed.
Public/Granted literature
- US20010018222A1 Method of making field emitters using porous silicon Public/Granted day:2001-08-30
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