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US06426234B2 Method of making field emitters using porous silicon 失效
使用多孔硅制造场致发射体的方法

  • Patent Title: Method of making field emitters using porous silicon
  • Patent Title (中): 使用多孔硅制造场致发射体的方法
  • Application No.: US09782396
    Application Date: 2001-02-13
  • Publication No.: US06426234B2
    Publication Date: 2002-07-30
  • Inventor: Terry L. Gilton
  • Applicant: Terry L. Gilton
  • Main IPC: H01L2100
  • IPC: H01L2100
Method of making field emitters using porous silicon
Abstract:
A process is provided for forming sharp asperities useful as field emitters. The process comprises patterning and doping a silicon substrate. The doped silicon substrate is anodized. The anodized area is then use for field emission tips. The process of the present invention is also useful for low temperature sharpening of tips fabricated by other methods. The tips are anodized, and then exposed to radiant energy and the resulting oxide is removed.
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