发明授权
- 专利标题： Differential pressure chemical-mechanical polishing in integrated circuit interconnects
- 专利标题（中）： 集成电路互连中的差压化学机械抛光
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申请号： US09905296申请日： 2001-07-13
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公开(公告)号： US06426297B1公开(公告)日： 2002-07-30
- 发明人: Kashmir S. Sahota , Krishnashree Achuthan , Sergey D. Lopatin
- 申请人： Kashmir S. Sahota , Krishnashree Achuthan , Sergey D. Lopatin
- 主分类号： H01L21382
- IPC分类号： H01L21382
摘要：
A method is provided for manufacturing an integrated circuit having a semiconductor substrate with a semiconductor device. A dielectric layer is formed on the semiconductor wafer and an opening is formed in the dielectric layer. A barrier layer is deposited to line the opening and a conductor core is deposited to fill the channel opening over the barrier layer. The semiconductor wafer is then subjected to chemical-mechanical polishing using a differential pressure between the center of the semiconductor wafer and its periphery.