发明授权
- 专利标题： Method of manufacturing semiconductor integrated circuit device
- 专利标题（中）： 半导体集成电路器件的制造方法
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申请号： US09448979申请日： 1999-11-24
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公开(公告)号： US06432799B1公开(公告)日： 2002-08-13
- 发明人: Takashi Hashimoto , Yoshifumi Ohnishi , Toshiyuki Kikuchi
- 申请人： Takashi Hashimoto , Yoshifumi Ohnishi , Toshiyuki Kikuchi
- 优先权： JP6-120894 19940602
- 主分类号： H01L21762
- IPC分类号： H01L21762
摘要：
A method of manufacturing a semiconductor integrated circuit device according to this invention, comprises a step of forming in a semiconductor substrate a deep groove for trench isolation with an aspect ratio of greater than 1, a step of burying a first insulating film in the deep groove in such a way that a shallow groove with an aspect ratio of not greater than 1 remains, and a step of depositing a second insulating film over the semiconductor substrate and then removing the upper portion of the second insulating film to planarize the upper surface of the second insulating film buried in the shallow groove in such a way that the upper surface of the second insulating film is almost flush with the surface surrounding the shallow groove.
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