公开(公告)号：US06432799B1

公开(公告)日：2002-08-13

申请号：US09448979

申请日：1999-11-24

申请人： Takashi Hashimoto ,  Yoshifumi Ohnishi ,  Toshiyuki Kikuchi

发明人： Takashi Hashimoto ,  Yoshifumi Ohnishi ,  Toshiyuki Kikuchi

IPC分类号： H01L21762

CPC分类号： H01L21/8249 ,  H01L21/76202 ,  H01L21/76235 ,  H01L21/763

摘要： A method of manufacturing a semiconductor integrated circuit device according to this invention, comprises a step of forming in a semiconductor substrate a deep groove for trench isolation with an aspect ratio of greater than 1, a step of burying a first insulating film in the deep groove in such a way that a shallow groove with an aspect ratio of not greater than 1 remains, and a step of depositing a second insulating film over the semiconductor substrate and then removing the upper portion of the second insulating film to planarize the upper surface of the second insulating film buried in the shallow groove in such a way that the upper surface of the second insulating film is almost flush with the surface surrounding the shallow groove.

摘要翻译： 根据本发明的制造半导体集成电路器件的方法包括在半导体衬底中形成具有大于1的纵横比用于沟槽隔离的深槽的步骤，将第一绝缘膜埋入深沟槽 使得长宽比不大于1的浅槽保留，并且在半导体衬底上沉积第二绝缘膜，然后去除第二绝缘膜的上部以平坦化第二绝缘膜的上表面的步骤 第二绝缘膜埋入浅槽中，使得第二绝缘膜的上表面与围绕浅槽的表面几乎齐平。

公开(公告)号：US06649487B2

公开(公告)日：2003-11-18

申请号：US10046813

申请日：2002-01-17

申请人： Takashi Hashimoto ,  Yoshifumi Ohnishi ,  Toshiyuki Kikuchi

发明人： Takashi Hashimoto ,  Yoshifumi Ohnishi ,  Toshiyuki Kikuchi

IPC分类号： H01L2176

CPC分类号： H01L21/8249 ,  H01L21/76202 ,  H01L21/76235 ,  H01L21/763

摘要： A method of manufacturing a semiconductor integrated circuit device according to this invention, comprises a step of forming in a semiconductor substrate a deep groove for trench isolation with an aspect ratio of greater than 1, a step of burying a first insulating film in the deep groove in such a way that a shallow groove with an aspect ratio of not greater than 1 remains, and a step of depositing a second insulating film over the semiconductor substrate and then removing the upper portion of the second insulating film to planarize the upper surface of the second insulating film buried in the shallow groove in such a way that the upper surface of the second insulating film is almost flush with the surface surrounding the shallow groove.

公开(公告)号：US6027983A

公开(公告)日：2000-02-22

申请号：US455139

申请日：1995-05-31

申请人： Takashi Hashimoto ,  Yoshifumi Ohnishi ,  Toshiyuki Kikuchi

发明人： Takashi Hashimoto ,  Yoshifumi Ohnishi ,  Toshiyuki Kikuchi

IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L21/763 ,  H01L21/8249 ,  H01L27/08 ,  H01L27/12

CPC分类号： H01L21/8249 ,  H01L21/76202 ,  H01L21/76235 ,  H01L21/763

摘要： A method of manufacturing a semiconductor integrated circuit device according to this invention, comprises a step of forming in a semiconductor substrate a deep groove for trench isolation with an aspect ratio of greater than 1, a step of burying a first insulating film in the deep groove in such a way that a shallow groove with an aspect ratio of not greater than 1 remains, and a step of depositing a second insulating film over the semiconductor substrate and then removing the upper portion of the second insulating film to planarize the upper surface of the second insulating film buried in the shallow groove in such a way that the upper surface of the second insulating film is almost flush with the surface surrounding the shallow groove.

摘要翻译： 根据本发明的制造半导体集成电路器件的方法包括在半导体衬底中形成具有大于1的纵横比用于沟槽隔离的深槽的步骤，将第一绝缘膜埋入深沟槽 使得长宽比不大于1的浅槽保留，并且在半导体衬底上沉积第二绝缘膜，然后去除第二绝缘膜的上部以平坦化第二绝缘膜的上表面的步骤 第二绝缘膜埋入浅槽中，使得第二绝缘膜的上表面与围绕浅槽的表面几乎齐平。

公开(公告)号：US5846869A

公开(公告)日：1998-12-08

申请号：US685844

申请日：1996-07-24

申请人： Takashi Hashimoto ,  Hideo Miura ,  Toshiyuki Kikuchi ,  Toshiyuki Mine ,  Yoichi Tamaki ,  Takahiro Kumauchi

发明人： Takashi Hashimoto ,  Hideo Miura ,  Toshiyuki Kikuchi ,  Toshiyuki Mine ,  Yoichi Tamaki ,  Takahiro Kumauchi

IPC分类号： H01L29/73 ,  H01L21/205 ,  H01L21/306 ,  H01L21/331 ,  H01L21/8222 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/165 ,  H01L29/732 ,  H01L29/737 ,  H01L21/301

CPC分类号： H01L21/02052 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/8222 ,  H01L29/66272 ,  H01L29/7375 ,  Y10S438/906

摘要： A method of manufacturing a bipolar transistor having an improved polysilicon emitter is disclosed. More specifically, hydrogen terminations or OH group terminations adhered (bonded) to an emitter-forming region are eliminated by a heat treatment in an inert gas atmosphere before forming emitter polysilicon. Subsequently, an amorphous silicon film for forming an emitter polysilicon is formed at a low temperature.

摘要翻译： 公开了一种制造具有改进的多晶硅发射极的双极晶体管的方法。 更具体地，在形成发射极多晶硅之前，通过在惰性气体气氛中的热处理来消除粘附（结合）到发射体形成区域的氢端基或OH基端基。 随后，在低温下形成用于形成发射极多晶硅的非晶硅膜。

公开(公告)号：US06200115B1

公开(公告)日：2001-03-13

申请号：US09366196

申请日：1999-08-04

申请人： Toshiyuki Kikuchi

发明人： Toshiyuki Kikuchi

IPC分类号： F04C1804

CPC分类号： F01C17/063 ,  F01C17/06 ,  F16C2360/42

摘要： A ball coupling constituting a rotation preventing mechanism (77) includes a first annular race section (59, 79) having a thrust ball transfer surface formed on one surface thereof, a second annular race section (61, 81) having a ball transfer surface formed on one surface thereof confronting the one surface of the first race section and thrust balls (67) interposed between the first and second race sections (79, 81). At least one of the first and second race sections has a cross sectional shape such that the central portion of the other surface (87) thereof confronting the one surface is a recessed groove (89). A scroll type compressor includes the rotation preventing mechanism on the back surface of a movable scroll member.

摘要翻译： 构成旋转防止机构（77）的球形联轴器包括在其一个表面上形成有推力球转移面的第一环形圈部（59,79），形成有球转移面的第二环形圈部（61,81） 在其面对第一座圈部分的一个表面的一个表面上以及置于第一和第二座圈部分（79,81）之间的推力球（67）。 第一和第二座圈中的至少一个具有横截面形状，使得面对该一个表面的另一个表面（87）的中心部分是凹槽（89）。 涡旋式压缩机包括在可动涡旋件的后表面上的防旋转机构。

公开(公告)号：US5860791A

公开(公告)日：1999-01-19

申请号：US670062

申请日：1996-06-25

申请人： Toshiyuki Kikuchi

发明人： Toshiyuki Kikuchi

IPC分类号： F04C28/26 ,  F04B49/02 ,  F04C18/02 ,  F04C18/04 ,  F04C28/16

CPC分类号： F04C28/16

摘要： A variable displacement mechanism of fluid displacement apparatus includes a housing having a suction chamber and a discharge chamber, a first scroll member disposed within said housing and having an end plate from which a first spiral element axially extends, and a second scroll member disposed for non-rotatable orbital movement relative to the first scroll member and having an end plate from which a second spiral element axially extends. At least one control mechanism is disposed on the end plate of the first scroll member for controlling the fluid communication between the fluid pockets and the suction chamber based on the rotational motion of the driving mechanism.

摘要翻译： 流体置换装置的可变排量机构包括具有吸入室和排出室的壳体，第一涡旋构件，设置在所述壳体内并具有端板，第一螺旋元件从该端板轴向延伸;以及第二涡旋构件， 可旋转的轨道运动相对于第一涡旋构件并且具有端板，第二螺旋元件从该端板轴向延伸。 至少一个控制机构设置在第一涡旋件的端板上，用于基于驱动机构的旋转运动来控制流体袋和吸入室之间的流体连通。

公开(公告)号：US5793097A

公开(公告)日：1998-08-11

申请号：US519096

申请日：1995-08-24

申请人： Hiromi Shimamoto ,  Takashi Uchino ,  Takeo Shiba ,  Kazuhiro Ohnishi ,  Yoichi Tamaki ,  Takashi Kobayashi ,  Toshiyuki Kikuchi ,  Takahide Ikeda

发明人： Hiromi Shimamoto ,  Takashi Uchino ,  Takeo Shiba ,  Kazuhiro Ohnishi ,  Yoichi Tamaki ,  Takashi Kobayashi ,  Toshiyuki Kikuchi ,  Takahide Ikeda

IPC分类号： H01C7/06 ,  H01L21/02 ,  H01L21/822 ,  H01L27/04 ,  H01L27/06 ,  H01L29/00 ,  H01L23/48 ,  H01L29/76

CPC分类号： H01L27/0652 ,  H01L27/0688 ,  H01L28/20

摘要： The present invention provides a polycrystalline silicon conducting structure (e.g., a resistor) whose resistance value is controlled, and can be less variable and less dependent on temperature with respect to any resistant value, and a process of producing the same. Use is made of at least a two-layer structure including a first polycrystalline silicon layer of large crystal grain size and a second polycrystalline silicon layer of small crystal grain size, and the first polycrystalline silicon layer has a positive temperature dependence of resistance while the second polycrystalline layer has a negative temperature dependence of resistance, or vice versa. Moreover, the polycrystalline silicon layer of large grain size can be formed by high dose ion implantation and annealing, or by depositing the layers by chemical vapor deposition at different temperatures so as to form large-grain and small-grain layers.

摘要翻译： 本发明提供了一种其电阻值被控制的多晶硅导电结构（例如电阻器），并且可以相对于任何电阻值而言可以变化较小并且对温度的依赖性较小，及其制造方法。 使用至少包括具有大晶粒尺寸的第一多晶硅层和小晶粒尺寸的第二多晶硅层的两层结构，并且第一多晶硅层具有正的温度对电阻的依赖性，而第二多晶硅层的第二 多晶层具有负电阻的温度依赖性，反之亦然。 此外，可以通过高剂量离子注入和退火，或者通过在不同温度下的化学气相沉积来沉积这些层，形成大晶粒和小晶粒层，可以形成大晶粒尺寸的多晶硅层。

公开(公告)号：US5067373A

公开(公告)日：1991-11-26

申请号：US461282

申请日：1990-01-05

申请人： Takahiro Kyohzuka ,  Toshiyuki Kikuchi

发明人： Takahiro Kyohzuka ,  Toshiyuki Kikuchi

IPC分类号： F16H61/10 ,  F16H59/24 ,  F16H59/72 ,  F16H61/00 ,  F16H61/02 ,  F16H61/04 ,  F16H61/16 ,  F16H61/18

CPC分类号： F16H61/0213 ,  F16H2061/0096 ,  F16H2061/0444 ,  F16H2061/0448 ,  F16H59/24 ,  F16H59/72 ,  Y10T477/653 ,  Y10T477/6934

摘要： An automatic-transmission control system causes the automatic transmission to shift once to an intermediate gear speed and then shift to the final gear speed when a jump shifting is required. The automatic transmission control system causes the automatic transmission to directly upshift to the final gear speed without once shifting to an intermediate gear speed when a jump upshift is required while the engine load is not heavier than a predetermined value or the vehicle speed is not lower than a predetermined value.

摘要翻译： 自动变速器控制系统使得自动变速器一旦移动到中间档位，然后在需要跳变换档时转换到最终档位。 自动变速器控制系统使得自动变速器在发动机负载不比预定值重或车速不低于当需要跳档换档时，直接升档到最终档位速度，而不会转换到中间档位速度 预定值。

公开(公告)号：US4687083A

公开(公告)日：1987-08-18

申请号：US592362

申请日：1984-03-22

申请人： Kaoru Sotoyama ,  Shizuo Sumida ,  Toshiyuki Kikuchi

发明人： Kaoru Sotoyama ,  Shizuo Sumida ,  Toshiyuki Kikuchi

IPC分类号： F16H61/14 ,  F16H45/02 ,  B60K41/02

CPC分类号： F16H61/143 ,  Y10T477/735 ,  Y10T477/75

摘要： A vehicle automatic transmission including a torque converter having a lock up clutch. A lock up control circuit is provided and has a memory including a first lock up control line for controlling the engagement and release of the lock up clutch when the torque converter turbine speed is close to the pump impeller speed, and a second lock up control line which is drawn along a line wherein the engine output torque is substantially zero so that the lock up clutch is released at a given engine load when the turbine speed is decreased beyond the first lock up control line, or when the turbine speed is increased beyond the second lock up control line.

摘要翻译： 一种车辆自动变速器，包括具有锁止离合器的变矩器。 提供一种锁定控制电路，并且具有存储器，该存储器包括第一锁定控制线，用于当变矩器涡轮转速接近泵叶轮速度时控制锁止离合器的接合和释放;以及第二锁定控制线 其沿着其中发动机输出扭矩基本上为零的线被绘制，使得当涡轮速度降低超过第一锁定控制线时，或者当涡轮机速度增加超过第一锁定控制线时，锁定离合器在给定的发动机负载下被释放 第二锁定控制线。

公开(公告)号：US07238582B2

公开(公告)日：2007-07-03

申请号：US11000092

申请日：2004-12-01

申请人： Hiromi Shimamoto ,  Takashi Uchino ,  Takeo Shiba ,  Kazuhiro Ohnishi ,  Yoichi Tamaki ,  Takashi Kobayashi ,  Toshiyuki Kikuchi ,  Takahide Ikeda

发明人： Hiromi Shimamoto ,  Takashi Uchino ,  Takeo Shiba ,  Kazuhiro Ohnishi ,  Yoichi Tamaki ,  Takashi Kobayashi ,  Toshiyuki Kikuchi ,  Takahide Ikeda

IPC分类号： H01L21/8222

CPC分类号： H01L27/0652 ,  H01L27/0688 ,  H01L28/20

摘要： The present invention provides a polycrystalline silicon conducting structure (e.g., a resistor) whose resistance value is controlled, and can be less variable and less dependent on temperature with respect to any resistant value, and a process of producing the same. Use is made of at least a two-layer structure including a first polycrystalline silicon layer of large crystal grain size and a second polycrystalline silicon layer of small crystal grain size, and the first polycrystalline silicon layer has a positive temperature dependence of resistance while the second polycrystalline silicon layer has a negative temperature dependence of resistance, or vice versa. Moreover, the polycrystalline silicon layer of large grain size can be formed by high dose ion implantation and annealing, or by depositing the layers by chemical vapor deposition at different temperatures so as to form large-grain and small-grain layers.

摘要翻译： 本发明提供了一种其电阻值被控制的多晶硅导电结构（例如电阻器），并且可以相对于任何电阻值而言可以变化较小并且对温度的依赖性较小，及其制造方法。 使用至少包括具有大晶粒尺寸的第一多晶硅层和小晶粒尺寸的第二多晶硅层的两层结构，并且第一多晶硅层具有正的温度对电阻的依赖性，而第二多晶硅层的第二 多晶硅层具有负电阻的温度依赖性，反之亦然。 此外，可以通过高剂量离子注入和退火，或者通过在不同温度下的化学气相沉积来沉积这些层，形成大晶粒和小晶粒层，可以形成大晶粒尺寸的多晶硅层。