发明授权
- 专利标题: 2N-QAM macrocell
- 专利标题(中): 2N-QAM宏单元
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申请号: US09175790申请日: 1998-10-20
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公开(公告)号: US06434199B1公开(公告)日: 2002-08-13
- 发明人: Ryan M. Desrosiers , Craig A. Hornbuckle
- 申请人: Ryan M. Desrosiers , Craig A. Hornbuckle
- 主分类号: H03C702
- IPC分类号: H03C702
摘要:
A 2N-QAM macrocell for generating constellations with 2N symbols, where N is the number of bits in the digital data word [D0:DN−1] applied to the macrocell. Since the digital data word is applied directly to the macrocell, the need for a digital mapping chip is thus eliminated thus reducing the complexity and power consumption of the circuit. An important aspect of the invention is that the 2N-QAM macrocell is amenable to being fabricated as a single microwave monolithic integrated circuit (MMIC) or integrated circuit (IC). As such, a QAM circuit can be formed from two MMICs; the 2N-QAM macrocell and a quadrature hybrid phase shifting device formed on separate MMIC to form a 2N-QAM circuit or one MMIC containing both the 0/90 degree phase shifter and the 2N-QAM circuit. The phase shifting device is used to provide the in-phase and quadrature phase components of the local oscillator signal. Since the QAM circuit in accordance with the present invention only requires one or two MMIC chips; the complexity and cost of the circuit is reduced and the need for tuning is obviated. The 2N-QAM macrocell may be formed from Gilbert transconductance multipliers with GaAs heterojunction bipolar transistor (HBT) technology, thus providing maximum symbol rates in excess of 1 Gsps.
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