发明授权
US06440262B1 Resist mask having measurement marks for measuring the accuracy of overlay of a photomask disposed on semiconductor wafer
失效
具有用于测量设置在半导体晶片上的光掩模的覆盖精度的测量标记的抗蚀剂掩模
- 专利标题: Resist mask having measurement marks for measuring the accuracy of overlay of a photomask disposed on semiconductor wafer
- 专利标题(中): 具有用于测量设置在半导体晶片上的光掩模的覆盖精度的测量标记的抗蚀剂掩模
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申请号: US10061285申请日: 2002-02-04
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公开(公告)号: US06440262B1公开(公告)日: 2002-08-27
- 发明人: Akiyuki Minami , Satoshi Machida
- 申请人: Akiyuki Minami , Satoshi Machida
- 优先权: JP10-362716 19981221
- 主分类号: H01L2100
- IPC分类号: H01L2100
摘要:
A resist mark for measuring the accuracy of overlay of a photomask disposed on a semiconductor wafer, includes a first measurement mark having a first opening, formed on the substrate, an intermediate layer formed on the first measurement mark and in the first opening, a frame-shaped second measurement mark formed on the intermediate layer, and a third measurement mark that is spaced from the second measurement mark toward the outside, formed on the intermediate layer. The second measurement mark has a width which is short enough not to be influenced by a deformation caused by the thermal flow phenomenon.