发明授权
- 专利标题: Electron beam lithography focusing through spherical aberration introduction
- 专利标题(中): 通过球面像差引入聚焦的电子束光刻
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申请号: US09679403申请日: 2000-10-04
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公开(公告)号: US06440620B1公开(公告)日: 2002-08-27
- 发明人: Victor Katsap , Eric Munro , John Andrew Rouse , Warren K. Waskiewicz , Xieqing Zhu
- 申请人: Victor Katsap , Eric Munro , John Andrew Rouse , Warren K. Waskiewicz , Xieqing Zhu
- 优先权: EP00307641 20000904
- 主分类号: G03C500
- IPC分类号: G03C500
摘要:
An apparatus and method of focusing including a source for producing an electron beam, a mask and a projection column, through which the electron beam passes, and a wafer on which the electron beam is to be focused. The wafer is located in a plane where spherical aberrations of the projection column reduce the negative defocusing effect caused by chromatic aberrations in the projection column. The apparatus and method are applicable to general electron patterning tools, electron patterning tools where a thickness of the mask is smaller than an electron mean free path of the electron patterning tool, and the SCALPEL™ electron patterning tool.