发明授权
- 专利标题: Method and structure for controlling the interface roughness of cobalt disilicide
- 专利标题(中): 控制二硅化钴界面粗糙度的方法和结构
-
申请号: US09416083申请日: 1999-10-12
-
公开(公告)号: US06440851B1公开(公告)日: 2002-08-27
- 发明人: Paul David Agnello , Cyril Cabral, Jr. , Roy Arthur Carruthers , James McKell Edwin Harper , Christian Lavoie , Kirk David Peterson , Robert Joseph Purtell , Ronnen Andrew Roy , Jean Louise Jordan-Sweet , Yun Yu Wang
- 申请人: Paul David Agnello , Cyril Cabral, Jr. , Roy Arthur Carruthers , James McKell Edwin Harper , Christian Lavoie , Kirk David Peterson , Robert Joseph Purtell , Ronnen Andrew Roy , Jean Louise Jordan-Sweet , Yun Yu Wang
- 主分类号: H01L2144
- IPC分类号: H01L2144
摘要:
A method of producing electrical contacts having reduced interface roughness as well as the electrical contacts themselves are disclosed herein. The method of the present invention comprises (a) forming an alloy layer having the formula MX, wherein M is a metal selected from the group consisting of Co and Ni and X is an alloying additive, over a silicon-containing substrate; (b) optionally forming an optional oxygen barrier layer over said alloy layer; (c) annealing said alloy layer at a temperature sufficient to form a MXSi layer in said structure; (d) removing said optional oxygen barrier layer and any remaining alloy layer; and optionally (e) annealing said MXSi layer at a temperature sufficient to form a MXSi2 layer in said structure.
信息查询