发明授权
US06440851B1 Method and structure for controlling the interface roughness of cobalt disilicide 失效
控制二硅化钴界面粗糙度的方法和结构

Method and structure for controlling the interface roughness of cobalt disilicide
摘要:
A method of producing electrical contacts having reduced interface roughness as well as the electrical contacts themselves are disclosed herein. The method of the present invention comprises (a) forming an alloy layer having the formula MX, wherein M is a metal selected from the group consisting of Co and Ni and X is an alloying additive, over a silicon-containing substrate; (b) optionally forming an optional oxygen barrier layer over said alloy layer; (c) annealing said alloy layer at a temperature sufficient to form a MXSi layer in said structure; (d) removing said optional oxygen barrier layer and any remaining alloy layer; and optionally (e) annealing said MXSi layer at a temperature sufficient to form a MXSi2 layer in said structure.
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