公开(公告)号：US07081676B2

公开(公告)日：2006-07-25

申请号：US10691299

申请日：2003-10-22

申请人： Paul David Agnello ,  Cyril Cabral, Jr. ,  Roy Arthur Carruthers ,  James McKell Edwin Harper ,  Christian Lavoie ,  Kirk David Peterson ,  Robert Joseph Purtell ,  Ronnen Andrew Roy ,  Jean Louise Jordan-Sweet ,  Yun Yu Wang

发明人： Paul David Agnello ,  Cyril Cabral, Jr. ,  Roy Arthur Carruthers ,  James McKell Edwin Harper ,  Christian Lavoie ,  Kirk David Peterson ,  Robert Joseph Purtell ,  Ronnen Andrew Roy ,  Jean Louise Jordan-Sweet ,  Yun Yu Wang

IPC分类号： H01L29/40 ,  H01L23/48 ,  H01L23/52

CPC分类号： H01L23/485 ,  H01L21/28518 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of producing electrical contacts having reduced interface roughness as well as the electrical contacts themselves are disclosed herein. The method of the present invention comprises (a) forming an alloy layer having the formula MX, wherein M is a metal selected from the group consisting of Co and Ni and X is an alloying additive, over a silicon-containing substrate; (b) optionally forming an optional oxygen barrier layer over said alloy layer; (c) annealing said alloy layer at a temperature sufficient to form a MXSi layer in said structure; (d) removing said optional oxygen barrier layer and any remaining alloy layer; and optionally (e) annealing said MXSi layer at a temperature sufficient to form a MXSi2 layer in said structure.

摘要翻译： 本文公开了一种制造具有降低的界面粗糙度的电接触以及电接触本身的方法。 本发明的方法包括（a）在含硅基材上形成具有式MX的合金层，其中M是选自Co和Ni的金属，X是合金添加剂; （b）任选地在所述合金层上形成任选的氧阻隔层; （c）在足以在所述结构中形成MXSi层的温度下退火所述合金层; （d）除去所述任选的氧气阻挡层和任何剩余的合金层; 以及任选地（e）在足以在所述结构中形成MXSi 2层的温度下退火所述MXSi层。

公开(公告)号：US06809030B2

公开(公告)日：2004-10-26

申请号：US10185547

申请日：2002-06-28

申请人： Paul David Agnello ,  Cyril Cabral, Jr. ,  Roy Arthur Carruthers ,  James McKell Edwin Harper ,  Christian Lavoie ,  Kirk David Peterson ,  Robert Joseph Purtell ,  Ronnen Andrew Roy ,  Jean Louise Jordan-Sweet ,  Yun Yu Wang

发明人： Paul David Agnello ,  Cyril Cabral, Jr. ,  Roy Arthur Carruthers ,  James McKell Edwin Harper ,  Christian Lavoie ,  Kirk David Peterson ,  Robert Joseph Purtell ,  Ronnen Andrew Roy ,  Jean Louise Jordan-Sweet ,  Yun Yu Wang

IPC分类号： H01L2144

CPC分类号： H01L23/485 ,  H01L21/28518 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of producing electrical contacts having reduced interface roughness as well as the electrical contacts themselves are disclosed herein. The method of the present invention comprises (a) forming an alloy layer having the formula MX, wherein M is a metal selected from the group consisting of Co and Ni and X is an alloying additives over a silicon-containing substrate; (b) optionally forming an optional oxygen barrier layer over said alloy layer; (c) annealing said alloy layer at a temperature sufficient to form a MXSi layer in said structure; (d) removing said optional oxygen barrier layer and any remaining alloy layer; and optionally (e) annealing said MXSi layer at a temperature sufficient to form a MXSi2 layer in said structure.

摘要翻译： 本文公开了一种制造具有降低的界面粗糙度的电接触以及电接触本身的方法。 本发明的方法包括（a）形成具有式MX的合金层，其中M是选自Co和Ni的金属，X是含硅基体上的合金添加剂; （b）任选地在所述合金层上形成任选的氧阻隔层; （c）在足以在所述结构中形成MXSi层的温度下退火所述合金层; （d）除去所述任选的氧气阻挡层和任何剩余的合金层; 以及任选地（e）在足以在所述结构中形成MXSi 2层的温度下退火所述MXSi层。

公开(公告)号：US06440851B1

公开(公告)日：2002-08-27

申请号：US09416083

申请日：1999-10-12

申请人： Paul David Agnello ,  Cyril Cabral, Jr. ,  Roy Arthur Carruthers ,  James McKell Edwin Harper ,  Christian Lavoie ,  Kirk David Peterson ,  Robert Joseph Purtell ,  Ronnen Andrew Roy ,  Jean Louise Jordan-Sweet ,  Yun Yu Wang

发明人： Paul David Agnello ,  Cyril Cabral, Jr. ,  Roy Arthur Carruthers ,  James McKell Edwin Harper ,  Christian Lavoie ,  Kirk David Peterson ,  Robert Joseph Purtell ,  Ronnen Andrew Roy ,  Jean Louise Jordan-Sweet ,  Yun Yu Wang

IPC分类号： H01L2144

CPC分类号： H01L23/485 ,  H01L21/28518 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of producing electrical contacts having reduced interface roughness as well as the electrical contacts themselves are disclosed herein. The method of the present invention comprises (a) forming an alloy layer having the formula MX, wherein M is a metal selected from the group consisting of Co and Ni and X is an alloying additive, over a silicon-containing substrate; (b) optionally forming an optional oxygen barrier layer over said alloy layer; (c) annealing said alloy layer at a temperature sufficient to form a MXSi layer in said structure; (d) removing said optional oxygen barrier layer and any remaining alloy layer; and optionally (e) annealing said MXSi layer at a temperature sufficient to form a MXSi2 layer in said structure.

摘要翻译： 本文公开了一种制造具有降低的界面粗糙度的电接触以及电接触本身的方法。 本发明的方法包括（a）在含硅基材上形成具有式MX的合金层，其中M是选自Co和Ni的金属，X是合金添加剂; （b）任选地在所述合金层上形成任选的氧阻隔层; （c）在足以在所述结构中形成MXSi层的温度下退火所述合金层; （d）除去所述任选的氧气阻挡层和任何剩余的合金层; 以及任选地（e）在足以在所述结构中形成MXSi 2层的温度下退火所述MXSi层。