Invention Grant
US06442042B2 Circuit configuration having at least one nanoelectronic component and method for fabricating the component 有权
具有至少一个纳米电子部件的电路结构和用于制造该部件的方法

  • Patent Title: Circuit configuration having at least one nanoelectronic component and method for fabricating the component
  • Patent Title (中): 具有至少一个纳米电子部件的电路结构和用于制造该部件的方法
  • Application No.: US09883901
    Application Date: 2001-06-18
  • Publication No.: US06442042B2
    Publication Date: 2002-08-27
  • Inventor: Ties RamckeLothar RischWolfgang Rösner
  • Applicant: Ties RamckeLothar RischWolfgang Rösner
  • Priority: DE19858759 19981218; DE16028987 20000616
  • Main IPC: H05K702
  • IPC: H05K702
Circuit configuration having at least one nanoelectronic component and method for fabricating the component
Abstract:
At least one CMOS component which is configured in a semiconductor substrate is part of the inventive circuit assembly. An insulating layer is configured on the semiconductor substrate. The insulating layer covers the CMOS component. A nanoelectronic component is configured above the insulating layer. At least one conducting structure is configured in the insulating layer and serves to link the nanoelectronic component with the CMOS component. If several nanoelectronic components are provided, they are preferably grouped to nano-circuit blocks. Each of the nano-circuit blocks is so small that the RC times of their lines do not exceed 1 ns.
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