发明授权
US06444818B2 Metal complexes with chelating C-, N-donor ligands for forming metal-containing films
有权
金属络合物与螯合C,N-供体配体形成含金属膜
- 专利标题: Metal complexes with chelating C-, N-donor ligands for forming metal-containing films
- 专利标题(中): 金属络合物与螯合C,N-供体配体形成含金属膜
-
申请号: US09943478申请日: 2001-08-30
-
公开(公告)号: US06444818B2公开(公告)日: 2002-09-03
- 发明人: Stefan Uhlenbrock , Brian A. Vaartstra
- 申请人: Stefan Uhlenbrock , Brian A. Vaartstra
- 主分类号: C07F1506
- IPC分类号: C07F1506
摘要:
A method of forming a film on a substrate using transition metal or lanthanide complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
公开/授权文献
信息查询