发明授权
US06444818B2 Metal complexes with chelating C-, N-donor ligands for forming metal-containing films 有权
金属络合物与螯合C,N-供体配体形成含金属膜

  • 专利标题: Metal complexes with chelating C-, N-donor ligands for forming metal-containing films
  • 专利标题(中): 金属络合物与螯合C,N-供体配体形成含金属膜
  • 申请号: US09943478
    申请日: 2001-08-30
  • 公开(公告)号: US06444818B2
    公开(公告)日: 2002-09-03
  • 发明人: Stefan UhlenbrockBrian A. Vaartstra
  • 申请人: Stefan UhlenbrockBrian A. Vaartstra
  • 主分类号: C07F1506
  • IPC分类号: C07F1506
Metal complexes with chelating C-, N-donor ligands for forming metal-containing films
摘要:
A method of forming a film on a substrate using transition metal or lanthanide complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
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