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    Methods of making semiconductor devices
    2.
    发明授权
    Methods of making semiconductor devices 有权
    制造半导体器件的方法

    公开(公告)号：US06319832B1

    公开(公告)日：2001-11-20

    申请号：US09253307

    申请日：1999-02-19

    申请人： Stefan Uhlenbrock ,  Brian A. Vaartstra

    发明人： Stefan Uhlenbrock ,  Brian A. Vaartstra

    IPC分类号： H01L2144

    CPC分类号： H01L28/55 ,  C23C16/18 ,  C23C16/405 ,  C23C16/409 ,  F17C11/00 ,  F17C2270/0518 ,  H01L21/28556 ,  H01L28/75

    摘要： In one aspect, the invention encompasses a semiconductor processing method of forming a metal-comprising layer over a substrate. A substrate is provided within a reaction chamber, and a source of a metal-comprising precursor is provided external to the reaction chamber. The metal-comprising precursor comprises a metal coordinated with at least one Lewis base to form a complex having a stoichiometric ratio of the at least one Lewis base to the metal. An amount of the at least one Lewis base is distributed within the source to an amount that is in excess of the stoichiometric ratio. At least some of the metal-comprising precursor is transported from the source to the reaction chamber. A metal is deposited from the metal-comprising precursor and onto the substrate within the reaction chamber. In another aspect, the invention encompasses a method of storing a metal-comprising material. A metal-comprising material is dispersed within a solution. The metal-comprising material comprises a complex having the stoichiometric form (Y)xM(Q)z; wherein M is a metal, Y is a first ligand, x is from 0 to 4, Q is a Lewis base, and z is from 1 to 6. An amount of Q is dispersed within the solution to an excess over the stoichiometric ratio of Q to M in the complex.

    摘要翻译： 一方面，本发明包括在衬底上形成含金属层的半导体加工方法。 在反应室内设置衬底，并且在反应室外部设置含金属的前体源。 含金属的前体包括与至少一个路易斯碱配位的金属，以形成具有至少一个路易斯碱与金属的化学计量比的配合物。 至少一种路易斯碱的量在源内分布至超过化学计量比的量。 至少一些含金属的前体从源输送到反应室。 金属从金属包含的前体沉积到反应室内的基底上。 另一方面，本发明包括存储含金属材料的方法。 含金属的材料分散在溶液中。 含金属材料包括具有化学计量形式（Y）x M（Q）z的络合物; 其中M是金属，Y是第一配体，x是0至4，Q是路易斯碱，z是1-6。一定量的Q在溶液中分散到超过化学计量比的过量 Q到M在复合体。

    Methods for preparing ruthenium and osmium compounds
    3.
    发明授权
    Methods for preparing ruthenium and osmium compounds 有权
    制备钌和锇化合物的方法

    公开(公告)号：US6114557A

    公开(公告)日：2000-09-05

    申请号：US372427

    申请日：1999-08-11

    申请人： Stefan Uhlenbrock ,  Brian A. Vaartstra

    发明人： Stefan Uhlenbrock ,  Brian A. Vaartstra

    IPC分类号： C07C13/23 ,  C07F9/02 ,  C07F15/00 ,  C23C16/16

    CPC分类号： C07F17/02 ,  C07F15/002 ,  C07F15/0026 ,  C07F15/0046 ,  C07F15/0053

    摘要： The present invention provides methods for the preparation of compounds of the formula (Formula I):L.sub.y M(CO).sub.zwherein M is Ru or Os, each L is independently a neutral ligand, y=1-4, and z=1-5. These methods involve the reaction of Ru.sub.3 (CO).sub.12 or Os.sub.3 (CO).sub.12 with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure.

    摘要翻译： 本发明提供制备式（I）化合物的方法：其中M是Ru或Os的LyM（CO）z，每个L独立地是中性配体，y = 1-4，z = 1-5 。 这些方法涉及在大气压下沸点高于苯的溶剂体系中的Ru 3（CO）12或Os 3（CO）12与中性配体的反应。

    Methods for preparing ruthenium and osmium compounds
    6.
    发明授权
    Methods for preparing ruthenium and osmium compounds 有权
    制备钌和锇化合物的方法

    公开(公告)号：US06576778B1

    公开(公告)日：2003-06-10

    申请号：US09650231

    申请日：2000-08-29

    申请人： Stefan Uhlenbrock ,  Brian A. Vaartstra

    发明人： Stefan Uhlenbrock ,  Brian A. Vaartstra

    IPC分类号： C07F1500

    CPC分类号： C07F17/02 ,  C07F15/002 ,  C07F15/0026 ,  C07F15/0046 ,  C07F15/0053

    摘要： The present invention provides methods for the preparation of compounds of the formula (Formula I): LyM(CO)z wherein M is Ru or Os, each L is independently a neutral ligand, y=1-4, and z=1-5. These methods involve the reaction of Ru3(CO)12 or Os3(CO)12 with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure.

    摘要翻译： 本发明提供了制备式（I）化合物的方法：其中M是Ru或Os，每个L独立地是中性配体，y = 1-4，z = 1-5。 这些方法涉及在大气压下沸点高于苯的溶剂体系中的Ru 3（CO）12或Os 3（CO）12与中性配体的反应。

    Deposition methods using heteroleptic precursors
    9.
    发明授权
    Deposition methods using heteroleptic precursors 有权
    使用杂音前体的沉积方法

    公开(公告)号：US07250367B2

    公开(公告)日：2007-07-31

    申请号：US10932149

    申请日：2004-09-01

    申请人： Brian A. Vaartstra ,  Donald Westmoreland ,  Eugene P. Marsh ,  Stefan Uhlenbrock

    发明人： Brian A. Vaartstra ,  Donald Westmoreland ,  Eugene P. Marsh ,  Stefan Uhlenbrock

    IPC分类号： H01L21/44

    CPC分类号： C23C16/45553 ,  C23C16/34 ,  C23C16/405 ,  H01L21/0228 ,  H01L21/3141

    摘要： An ALD method includes exposing a substrate to a first precursor including a plurality of different ligands, chemisorbing a precursor monolayer on the substrate, and reacting a second precursor with the precursor monolayer to yield a product monolayer. A surface reactive ligand exhibits a chemisorption affinity that exceeds the chemisorption affinity exhibited by a gas reactive ligand. Another deposition method includes exposing a substrate to a precursor containing an amino and/or imino ligand and a halide ligand and depositing a layer. The precursor exhibits a volatility that exceeds the volatility with a halide ligand taking the place of each amino and/or imino ligand. The precursor exhibits a thermal stability that exceeds the thermal stability with an amino and/or imino ligand taking the place of each halide ligand. The layer may exhibit less halogen content than with a halide ligand taking the place of each amino and/or imino ligand.

    摘要翻译： ALD方法包括将底物暴露于包含多个不同配体的第一前体，化学吸附底物上的前体单层，以及使第二前体与前体单层反应以产生产物单层。 表面反应性配体表现出超过气体反应性配体显示的化学吸附亲和力的化学吸附亲和力。 另一种沉积方法包括将底物暴露于含有氨基和/或亚氨基配体和卤化物配体的前体并沉积一层。 前体表现出挥发性，其挥发性用卤化物配体取代每个氨基和/或亚氨基配体。 前体表现出超过热稳定性的热稳定性，氨基和/或亚氨基配体取代每个卤化物配体。 该层可以表现出比卤化物配体更少的卤素含量，代替每个氨基和/或亚氨基配体。

    Solutions of metal-comprising materials
    10.
    发明授权
    Solutions of metal-comprising materials 有权
    含金属材料的解决方案

    公开(公告)号：US06773495B2

    公开(公告)日：2004-08-10

    申请号：US10336087

    申请日：2003-01-03

    申请人： Stefan Uhlenbrock ,  Brian A. Vaartstra

    发明人： Stefan Uhlenbrock ,  Brian A. Vaartstra

    IPC分类号： C23C1600

    CPC分类号： H01L28/55 ,  C23C16/18 ,  C23C16/405 ,  C23C16/409 ,  F17C11/00 ,  F17C2270/0518 ,  H01L21/28556 ,  H01L28/75

    摘要： In one aspect, the invention encompasses a semiconductor processing method of forming a metal-comprising layer over a substrate. A substrate is provided within a reaction chamber, and a source of a metal-comprising precursor is provided external to the reaction chamber. The metal-comprising precursor comprises a metal coordinated with at least one Lewis base to form a complex having a stoichiometric ratio of the at least one Lewis base to the metal. An amount of the at least one Lewis base is distributed within the source to an amount that is in excess of the stoichiometric ratio. At least some of the metal-comprising precursor is transported from the source to the reaction chamber. A metal is deposited from the metal-comprising precursor and onto the substrate within the reaction chamber. In another aspect, the invention encompasses a method of storing a metal-comprising material. A metal-comprising material is dispersed within a solution. The metal-comprising material comprises a complex having the stoichiometric form (Y)xM(Q)z; wherein M is a metal, Y is a first ligand, x is from 0 to 4, Q is a Lewis base, and z is from 1 to 6. An amount of Q is dispersed within the solution to an excess over the stoichiometric ratio of Q to M in the complex.

    摘要翻译： 一方面，本发明包括在衬底上形成含金属层的半导体加工方法。 在反应室内设置衬底，并且在反应室外部设置含金属的前体源。 含金属的前体包括与至少一个路易斯碱配位的金属，以形成具有至少一个路易斯碱与金属的化学计量比的配合物。 至少一种路易斯碱的量在源内分布至超过化学计量比的量。 至少一些含金属的前体从源输送到反应室。 金属从金属包含的前体沉积到反应室内的基底上。 另一方面，本发明包括存储含金属材料的方法。 含金属的材料分散在溶液中。 含金属材料包括具有化学计量形式（Y）x M（Q）z的络合物; 其中M是金属，Y是第一配体，x是0至4，Q是路易斯碱，z是1-6。一定量的Q在溶液中分散到超过化学计量比的过量 Q到M在复合体。