发明授权
- 专利标题： Method and system for fabricating a high density magnetoresistive device
- 专利标题（中）： 制造高密度磁阻器件的方法和系统
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申请号： US09285330申请日： 1999-04-02
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公开(公告)号： US06445553B2公开(公告)日： 2002-09-03
- 发明人: Ronald Barr , Robert E. Rottmayer
- 申请人： Ronald Barr , Robert E. Rottmayer
- 主分类号： G11B539
- IPC分类号： G11B539
摘要：
A system and method for providing a device for reading data is disclosed. The device includes a magnetoresistive element. The method and system include providing a read gap, providing a plurality of leads, and providing an insulator. The read gap covers at least a portion of the magnetoresistive element. The plurality of leads is electrically coupled with the magnetoresistive element. The insulator electrically isolates a portion of each of the plurality of leads. In one aspect, the read gap is formed in a first process and the insulator is formed in a second process decoupled from the first process.