Heat assisted magnetic recording head with multilayer electromagnetic radiation emission structure
    4.
    发明授权
    Heat assisted magnetic recording head with multilayer electromagnetic radiation emission structure 有权
    具有多层电磁辐射发射结构的热辅助磁记录头

    公开(公告)号:US07518815B2

    公开(公告)日:2009-04-14

    申请号:US11286720

    申请日:2005-11-23

    IPC分类号: G11B5/02

    摘要: A heat assisted magnetic recording head with a multilayer electromagnetic (EM) radiation emission structure. The multilayer EM radiation emission structure is in optical communication with a light source for heating a recording medium. Particularly, the multilayer EM radiation emission structure includes a conducting layer for receiving the light source and a protective layer formed adjacent the conducting layer to protect the conducting layer from contact with a recording medium. An aperture extends through the conducting layer in the protective layer to allow the light source to pass therethrough to heat the recording medium.

    摘要翻译: 一种具有多层电磁(EM)辐射发射结构的热辅助磁记录头。 多层EM辐射发射结构与用于加热记录介质的光源光通信。 特别地,多层EM辐射发射结构包括用于接收光源的导电层和邻近导电层形成的保护层,以保护导电层不与记录介质接触。 孔径延伸穿过保护层中的导电层,以允许光源通过,以加热记录介质。

    Magnetoresistive read sensor including a carbon barrier layer and method for making same
    5.
    发明授权
    Magnetoresistive read sensor including a carbon barrier layer and method for making same 有权
    包含碳阻挡层的磁阻读取传感器及其制造方法

    公开(公告)号:US06330137B1

    公开(公告)日:2001-12-11

    申请号:US09330461

    申请日:1999-06-11

    IPC分类号: G11B539

    摘要: A magnetoresistive device includes an insulating barrier formed of carbon. In particular, the carbon can be diamond-like carbon, and more particularly, the carbon can be tetrahedral amorphous carbon (t-aC). The insulating barrier can be disposed between the free layer and pinned layer of a spin valve read sensor or otherwise incorporated with other various read sensor configurations. The insulating barrier is configured to increase a resistance of the read sensor with which it is incorporated, and thereby to increase the read signal. Such a barrier can be formed by cathodic arc deposition techniques, with substantially defect-free thicknesses from about 5 Å and above, and band gap values in the range of about 1 eV to about 5.4 eV.

    摘要翻译: 磁阻器件包括由碳形成的绝缘屏障。 特别地,碳可以是类金刚石碳,更具体地说,碳可以是四面体无定形碳(t-aC)。 绝缘屏障可以设置在自旋阀读取传感器的自由层和钉扎层之间,或者与其他各种读取传感器配置结合。 绝缘屏障被配置为增加读入传感器与其并入的电阻,从而增加读取信号。 这种阻挡层可以通过阴极电弧沉积技术形成,其基本上无缺陷的厚度大约等于或等于5埃,带隙值在约1eV至约5.4eV的范围内。

    System for biasing a synthetic free layer in a magnetoresistance sensor
    6.
    发明授权
    System for biasing a synthetic free layer in a magnetoresistance sensor 有权
    用于在磁阻传感器中偏置合成自由层的系统

    公开(公告)号:US06201673B1

    公开(公告)日:2001-03-13

    申请号:US09285318

    申请日:1999-04-02

    IPC分类号: G11B5127

    摘要: A system and method for providing a magnetoresistive head is disclosed. The method and system include providing a spin valve including a synthetic free layer. The synthetic free layer includes a ferromagnetic layer. The method and system also include providing an antiferromagnetic biasing layer exchange coupled to a first portion of the ferromagnetic layer. The antiferromagnetic biasing layer magnetically biases the synthetic free layer to ensure the single domain structure and reduce noise.

    摘要翻译: 公开了一种用于提供磁阻头的系统和方法。 该方法和系统包括提供包括合成自由层的自旋阀。 合成自由层包括铁磁层。 该方法和系统还包括提供耦合到铁磁层的第一部分的反铁磁偏置层交换。 反铁磁偏置层对合成自由层进行磁偏置,以确保单畴结构并降低噪声。

    Synthetic antiferromagnetic pinned layer with Fe/FeSi/Fe system
    7.
    发明授权
    Synthetic antiferromagnetic pinned layer with Fe/FeSi/Fe system 失效
    具有Fe / FeSi / Fe体系的合成反铁磁钉扎层

    公开(公告)号:US06633464B2

    公开(公告)日:2003-10-14

    申请号:US09209060

    申请日:1998-12-09

    IPC分类号: G11B539

    摘要: A magnetoresistive (MR) device includes a synthetic antiferromagnetic (AFM) layer having an Fe/FeSi/Fe construction. A first Fe layer of the synthetic AFM layer has a magnetization substantially in a first direction, while a second Fe layer of the synthetic AFM layer has a magnetization substantially in a second direction that is substantially antiparallel to the first direction. The magnetoresistive device can be a spin valve in which a first surface of the synthetic AFM layer is adjacent to a pinning layer, and a second surface of the synthetic AFM layer is adjacent to a spacer layer. Further, the spin valve includes a free layer that overlies the spacer, thereby being separated from the synthetic AFM layer by the spacer. The pinning layer, synthetic AFM layer, spacer, and free layer can be bounded by a first shield and a second shield to provide magnetic shielding of the spin valve sensor.

    摘要翻译: 磁阻(MR)装置包括具有Fe / FeSi / Fe构造的合成反铁磁(AFM)层。 合成AFM层的第一Fe层具有基本上在第一方向上的磁化,而合成AFM层的第二Fe层具有基本上在基本上与第一方向反平行的第二方向上的磁化。 磁阻器件可以是自旋阀,其中合成AFM层的第一表面与钉扎层相邻,并且合成AFM层的第二表面与间隔层相邻。 此外,自旋阀包括覆盖间隔物的自由层,从而通过间隔物与合成AFM层分离。 钉扎层,合成AFM层,隔离层和自由层可以由第一屏蔽层和第二屏蔽层限定,以提供自旋阀传感器的磁屏蔽。

    Merged write head with magnetically isolated poletip
    8.
    发明授权
    Merged write head with magnetically isolated poletip 失效
    合并写磁头与磁性孤立的poletip

    公开(公告)号:US06404601B1

    公开(公告)日:2002-06-11

    申请号:US09490518

    申请日:2000-01-25

    IPC分类号: G11B531

    摘要: A magnetic head has an exchange isolated poletip located between a shield of an MR sensor and a write pole of an inductive sensor. The poletip is preferably made of high Bs material, allowing the flux that travels through the much larger pole layer to funnel through the poletip without saturation. The poletip is isolated from the shield layer in order to decouple the shield layer from unfavorable domain patterns that may occur in the poletip, which in turn reduces noise in the sensor, while the shield layer serves to complete the inductive circuit. Despite having a poletip isolated by nonmagnetic material, heads built according to this invention have demonstrated high overwrite as well as remarkably low noise.

    摘要翻译: 磁头具有位于MR传感器的屏蔽和感应传感器的写极之间的交换隔离的poletip。 poletip优选由高Bs材料制成,允许穿过更大极点的焊剂漏斗穿过poletip而不饱和。 poletip与屏蔽层隔离,以便将屏蔽层与可能在poletip中发生的不利的域图案分离,从而降低传感器的噪声,同时屏蔽层用于完成感应电路。 尽管具有由非磁性材料隔离的poletip,但是根据本发明构建的头部已经表现出高覆盖以及非常低的噪声。

    Method and system for fabricating a high density magnetoresistive device
    10.
    发明授权
    Method and system for fabricating a high density magnetoresistive device 失效
    制造高密度磁阻器件的方法和系统

    公开(公告)号:US06445553B2

    公开(公告)日:2002-09-03

    申请号:US09285330

    申请日:1999-04-02

    IPC分类号: G11B539

    摘要: A system and method for providing a device for reading data is disclosed. The device includes a magnetoresistive element. The method and system include providing a read gap, providing a plurality of leads, and providing an insulator. The read gap covers at least a portion of the magnetoresistive element. The plurality of leads is electrically coupled with the magnetoresistive element. The insulator electrically isolates a portion of each of the plurality of leads. In one aspect, the read gap is formed in a first process and the insulator is formed in a second process decoupled from the first process.

    摘要翻译: 公开了一种用于提供读取数据的设备的系统和方法。 该装置包括磁阻元件。 该方法和系统包括提供读取间隙,提供多个引线以及提供绝缘体。 读取间隙覆盖磁阻元件的至少一部分。 多个引线与磁阻元件电耦合。 绝缘体电绝缘多个引线中的每一个的一部分。 在一个方面,读取间隙形成在第一工艺中,并且绝缘体形成在与第一工艺分离的第二工艺中。