Invention Grant
- Patent Title: Impregnated-type cathode substrate with large particle diameter low porosity region and small particle diameter high porosity region
- Patent Title (中): 浸渍型阴极基体，粒径小，孔径小，粒径小，孔隙率高
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Application No.: US09466478Application Date: 1999-12-17
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Publication No.: US06447355B1Publication Date: 2002-09-10
- Inventor: Eiichirou Uda , Toshiharu Higuchi , Osamu Nakamura , Kiyomi Koyama , Sadao Matsumoto , Yoshiaki Ouchi , Kazuo Kobayashi , Takashi Sudo , Katsuhisa Homma
- Applicant: Eiichirou Uda , Toshiharu Higuchi , Osamu Nakamura , Kiyomi Koyama , Sadao Matsumoto , Yoshiaki Ouchi , Kazuo Kobayashi , Takashi Sudo , Katsuhisa Homma
- Priority: JP7-143127 19950609
- Main IPC: H01J114
- IPC: H01J114
Abstract:
There is provided an impregnated-type cathode substrate comprising a large particle diameter low porosity region and a small particle diameter high porosity region which is provided in a side of an electron emission surface of the large particle diameter low porosity region and has an average particle diameter smaller than an average particle diameter of the large particle diameter low pore region and a porosity higher than a porosity of the large particle diameter low porosity region, the impregnated-type cathode being impregnated with an electron emission substance.
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