发明授权
- 专利标题: Charged-particle-beam microlithography methods including chip-exposure sequences for reducing thermally induced lateral shift of exposure position on the substrate
- 专利标题(中): 带电粒子束微光刻法包括用于减少衬底上曝光位置的热诱导横向位移的片段曝光序列
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申请号: US09795258申请日: 2001-02-27
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公开(公告)号: US06447964B2公开(公告)日: 2002-09-10
- 发明人: Teruaki Okino , Tomoharu Fujiwara , Noriyuki Hirayanagi
- 申请人: Teruaki Okino , Tomoharu Fujiwara , Noriyuki Hirayanagi
- 优先权: JP2000-055583 20000301
- 主分类号: G03C500
- IPC分类号: G03C500
摘要:
Methods are disclosed for reducing effects of thermal expansion of a sensitive substrate arising during microlithographic exposure of the substrate using a charged particle beam. Thermal expansion ordinarily causes lateral shift of exposure position of dies (chips) on the substrate which tends to reduce the positional accuracy with which images of the dies are formed on the substrate. Generally, regions of the substrate where entire dies are formed are exposed first, followed by regions (especially peripheral regions) exposed with only portions of dies. In addition, the substrate can be mounted on a wafer chuck configured to circulate a heat-transfer gas in contact with the substrate to remove heat from the substrate. In addition, the wafer chuck can be maintained at a constant temperature by circulating a liquid coolant through a conduit in the body of the wafer chuck.
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