Charged-particle-beam microlithography methods including chip-exposure sequences for reducing thermally induced lateral shift of exposure position on the substrate
    2.
    发明授权
    Charged-particle-beam microlithography methods including chip-exposure sequences for reducing thermally induced lateral shift of exposure position on the substrate 失效
    带电粒子束微光刻法包括用于减少衬底上曝光位置的热诱导横向位移的片段曝光序列

    公开(公告)号:US06447964B2

    公开(公告)日:2002-09-10

    申请号:US09795258

    申请日:2001-02-27

    IPC分类号: G03C500

    摘要: Methods are disclosed for reducing effects of thermal expansion of a sensitive substrate arising during microlithographic exposure of the substrate using a charged particle beam. Thermal expansion ordinarily causes lateral shift of exposure position of dies (chips) on the substrate which tends to reduce the positional accuracy with which images of the dies are formed on the substrate. Generally, regions of the substrate where entire dies are formed are exposed first, followed by regions (especially peripheral regions) exposed with only portions of dies. In addition, the substrate can be mounted on a wafer chuck configured to circulate a heat-transfer gas in contact with the substrate to remove heat from the substrate. In addition, the wafer chuck can be maintained at a constant temperature by circulating a liquid coolant through a conduit in the body of the wafer chuck.

    摘要翻译: 公开了用于减少使用带电粒子束在基板的微光刻曝光期间产生的敏感基板的热膨胀效应的方法。 热膨胀通常导致基板上的模具(芯片)的曝光位置的横向偏移,这倾向于降低在基板上形成管芯图像的位置精度。 通常,首先露出形成有整个模具的基板的区域,然后暴露出仅一部分模具的区域(特别是周边区域)。 此外,基板可以安装在晶片卡盘上,该卡盘被配置为使与基板接触的传热气体循环,以从基板去除热量。 此外,通过使液体冷却剂通过晶片卡盘的主体中的导管循环,可以将晶片卡盘保持在恒定温度。

    Charged-particle-beam microlithography apparatus and methods including optical corrections made during subfield exposures
    3.
    发明授权
    Charged-particle-beam microlithography apparatus and methods including optical corrections made during subfield exposures 失效
    带电粒子束微光刻设备和包括在子场曝光期间进行的光学校正的方法

    公开(公告)号:US06657207B2

    公开(公告)日:2003-12-02

    申请号:US09805732

    申请日:2001-03-13

    IPC分类号: G21G500

    摘要: Charged-particle-beam (CPB) apparatus and methods are disclosed that achieve efficient correction of imaging conditions such as shape-astigmatic aberrations, etc., caused by differences in the distribution of pattern elements within respective subfields of the reticle. Indices based on the pattern-element distributions within subfields are stored, together with corresponding optical-correction data for the subfields. As the subfields are exposed, respective data are recalled and the exposure is performed with optical corrections made according to the data. The indices are determined beforehand from pattern data at time of reticle manufacture. The tabulated data are rewritable with changes in apparatus parameters such as beam-current density and beam-divergence angle. Intermediate data can be determined by interpolation of tabulated data.

    摘要翻译: 公开了充电粒子束(CPB)装置和方法,其实现由掩模版的各个子场内的图案元素分布的差异导致的成像条件(诸如形像像差等)的有效校正。 基于子场内的图案元素分布的指数与子场的相应光学校正数据一起被存储。 当子场曝光时,调用相应的数据,并根据数据进行光学校正来进行曝光。 这些指标是从标线制造时的图形数据预先确定的。 列表数据可以随设备参数的变化而改写,例如光束电流密度和光束发散角。 中间数据可以通过插入表格数据来确定。

    Apparatus for detecting or collecting secondary electrons,
charged-particle beam exposure apparatus comprising same, and related
methods
    4.
    发明授权
    Apparatus for detecting or collecting secondary electrons, charged-particle beam exposure apparatus comprising same, and related methods 失效
    用于检测或收集二次电子的装置,包括它的带电粒子束曝光装置及相关方法

    公开(公告)号:US5981947A

    公开(公告)日:1999-11-09

    申请号:US17736

    申请日:1998-02-03

    摘要: Apparatus and methods are disclosed for performing highly precise mark detection by obtaining a large signal as a result of the efficient capture of secondary electrons (SEs) emitted from a surface of a specimen. A charged-particle beam is directed at a location (e.g., a mark) on the specimen (e.g., reticle or wafer). SEs emitted from the location are detected using one or more secondary-electron collectors or detectors. To guide the SEs toward the secondary-electron collectors or detectors, a magnetic flux is created that extends radially outward in the vicinity of the surface of the specimen. E.g., an objective lens is situated above the specimen adjacent the specimen surface, and an electromagnetic lens is placed below the specimen adjacent the lower surface of the specimen. The magnetic fields produced by these lenses can be mutually repulsive to form a resultant magnetic flux near the upper surface of the specimen that extends radially outward parallel with the upper surface of the specimen. Thus, electrons can escape only radially outward parallel to the sample surface to the secondary-electron collectors or detectors. The apparatus provides a stable charged-particle beam without charging because the SE collector or detector removes SEs from the vicinity of the optical axis.

    摘要翻译: 公开了用于通过从样本表面发射的二次电子(SE)的有效捕获而获得大的信号来执行高精度标记检测的装置和方法。 带电粒子束被引导到样品(例如,标线片或晶片)上的位置(例如,标记)。 使用一个或多个二次电子收集器或检测器检测从该位置发射的SE。 为了将SE引向二次电子收集器或检测器,产生在样品表面附近径向向外延伸的磁通量。 例如,物镜位于与样本表面相邻的样本上方,并且电磁透镜放置在与样本下表面相邻的样本下方。 由这些透镜产生的磁场可以相互排斥,以在样本的上表面附近形成一个与样本上表面径向向外平行延伸的合成磁通量。 因此,电子可以平行于样品表面径向向外逸出到二次电子收集器或检测器。 该装置提供稳定的带电粒子束而不进行充电,因为SE收集器或检测器从光轴附近去除SE。

    Fiducial mark bodies for charged-particle-beam (CPB) microlithography, methods for making same, and CPB microlithography apparatus comprising same
    5.
    发明授权
    Fiducial mark bodies for charged-particle-beam (CPB) microlithography, methods for making same, and CPB microlithography apparatus comprising same 失效
    用于带电粒子束(CPB)微光刻的基准标记体,其制造方法,以及包括其的CPB微光刻设备

    公开(公告)号:US06632722B2

    公开(公告)日:2003-10-14

    申请号:US10068172

    申请日:2002-02-06

    IPC分类号: H01L2176

    摘要: Fiducial mark bodies are provided for use in CPB microlithography apparatus and methods. Such bodies are especially useful for attachment to the wafer stage of such apparatus, for measuring a distance between a reference position of the CPB-optical system of the apparatus and a reference position of an optical-based alignment sensor of the apparatus. The mark bodies provide improved accuracy of these and other positional measurements. A typical mark body is made of a substrate plate (e.g., quartz or quartz-ceramic) having a low coefficient of thermal expansion. Mark elements are defined on the substrate plate by a layer of heavy metal (e.g. are Ta, W, or Pt). The mark body includes a surficial or interior layer of an electrically conductive light metal that prevents electrostatic charging of the mark body and can be connected to ground.

    摘要翻译: 提供了用于CPB微光刻设备和方法的基准标记体。 这样的主体对于附接到这种装置的晶片台是特别有用的,用于测量装置的CPB-光学系统的基准位置与装置的基于光学的对准传感器的基准位置之间的距离。 标记体提供了这些和其他位置测量的改进的精度。 典型的标记体由具有低热膨胀系数的衬底板(例如石英或石英陶瓷)制成。 标记元件通过重金属层(例如Ta,W或Pt)在衬底板上限定。 标记体包括导电轻金属的表层或内层,其防止标记体的静电充电并且可以连接到地面。

    Substrate conveyor apparatus, substrate conveyance method and exposure apparatus
    8.
    发明申请
    Substrate conveyor apparatus, substrate conveyance method and exposure apparatus 有权
    基板输送装置,基板输送方法及曝光装置

    公开(公告)号:US20060087638A1

    公开(公告)日:2006-04-27

    申请号:US11235130

    申请日:2005-09-27

    IPC分类号: G03B27/58

    摘要: With respect to a substrate conveyor apparatus that, being a substrate conveyor apparatus that carries substrates on which patterns are formed, carries the substrates in a state protected by a protective cover when the substrate is not used, a substrate conveyor apparatus having a cover protection means that conceals the inner surface of the protective cover when the substrate is used.

    摘要翻译: 对于作为基板输送装置的基板输送装置,其特征在于,作为基板输送装置,当基板不使用时,承载基板的图案形成在基板上的状态下,将基板保持在被保护盖保护的状态的基板输送装置,具有盖保护装置 当使用基板时,隐藏保护盖的内表面。

    Methods and apparatus for detecting and correcting reticle deformations in microlithography
    9.
    发明授权
    Methods and apparatus for detecting and correcting reticle deformations in microlithography 失效
    在微光刻中检测和校正掩模版变形的方法和装置

    公开(公告)号:US06835511B2

    公开(公告)日:2004-12-28

    申请号:US10132343

    申请日:2002-04-24

    IPC分类号: G03C500

    摘要: Microlithography methods and apparatus are disclosed that allow reticle deformations to be measured and corrected quickly and accurately. Multiple alignment marks (comprising a “first set” and “second set” of reticle-position-measurement marks) are formed on the reticle. A first set of reticle-deformation data is obtained by detecting the positions of at least some of the first set of reticle-position-measurement marks using an inspection device that is separate from the microlithography apparatus with which the reticle will be used for making lithographic exposures. The first set of reticle-deformation data is stored in a first memory. The reticle then is mounted in the microlithography apparatus, in which a second set of reticle-deformation data is obtained by detecting the positions of at least some of the second set of reticle-position-measurement marks. The second set of reticle-deformation data is stored in a second memory. Lithographic exposures are performed, using the reticle so measured, while correcting the respective positions and/or deformations of the respective subfields on the fly, according to both sets of reticle-deformation data recalled from the respective memories.

    摘要翻译: 公开了微光刻方法和装置,其允许标线变形被快速和准确地测量和校正。 在掩模版上形成多个对准标记(包括标线片位置测量标记的“第一组”和“第二组”)。 使用与使用光掩膜将用于制作光刻的微光刻设备分开的检查装置来检测第一组掩模版位置测量标记中的至少一些的位置来获得第一组掩模版变形数据 曝光。 第一组掩模版变形数据被存储在第一存储器中。 然后将掩模版安装在微光刻设备中,其中通过检测第二组掩模版位置测量标记中的至少一些的位置来获得第二组掩模版变形数据。 第二组掩模版变形数据存储在第二存储器中。 根据从各个存储器回忆的两组标线片变形数据,使用如此测量的掩模板,同时在飞行中校正各个子场的各个位置和/或变形,进行平版印刷曝光。

    Mask and exposure apparatus
    10.
    发明申请
    Mask and exposure apparatus 有权
    面膜和曝光装置

    公开(公告)号:US20070190433A1

    公开(公告)日:2007-08-16

    申请号:US11707003

    申请日:2007-02-16

    IPC分类号: A47G1/12 G03F1/14 G03F1/00

    摘要: An exposure apparatus transfers a pattern from a mask onto a sensitive substrate. A film protects the mask, and a film frame, between the mask and the film, holds the film spaced away from a surface of the mask. The film has a first transmittance for radiation of a necessary wavelength and has a second transmittance for radiation of an unnecessary wavelength; the first transmittance is higher than the second transmittance. The film might reflect or absorb the unnecessary wavelength. The necessary wavelength may be an exposure wavelength and may also be in the range of extreme ultra violet radiation. An atmosphere around the mask transitions from an air atmosphere to a reduced-pressure atmosphere, or from a reduced-pressure atmosphere to an air atmosphere, at a speed that allows a difference between a pressure applied to one surface of the film and a pressure applied to the other surface of the film to be held at a predetermined value or smaller.

    摘要翻译: 曝光装置将图案从掩模转印到敏感基板上。 胶片保护面罩和胶片框架之间的掩模和胶片之间,保持膜与掩模的表面间隔开。 该膜对于必需波长的辐射具有第一透射率,并且对于不需要的波长的辐射具有第二透射率; 第一透射率高于第二透射率。 这部电影可能反映或吸收不必要的波长。 所需的波长可以是曝光波长,并且也可以在极紫外辐射的范围内。 掩模周围的气氛从施加到膜的一个表面的压力和施加的压力之间的差异的速度从空气气氛转变到减压气氛,或从减压气氛转变到空气气氛 到要保持在预定值或更小的膜的另一表面。