发明授权
- 专利标题: Photoresist composition for deep UV and process thereof
- 专利标题(中): 用于深紫外线的光致抗蚀剂组合物及其工艺
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申请号: US09619336申请日: 2000-07-19
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公开(公告)号: US06447980B1公开(公告)日: 2002-09-10
- 发明人: M. Dalil Rahman , Munirathna Padmanaban , Ralph R. Dammel
- 申请人: M. Dalil Rahman , Munirathna Padmanaban , Ralph R. Dammel
- 主分类号: G03C1492
- IPC分类号: G03C1492
摘要:
The present invention relates to a chemically amplified system, which is, sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a polymer that is insoluble an aqueous alkaline solution and comprises at least one acid labile group, b) a compound capable of producing an acid upon radiation. The present invention comprises a polymer that is made from a alicyclic hydrocarbon olefin, an acrylate with a pendant cyclic moeity, and a cyclic anhydride. The present invention also relates to a process for imaging such a photoresist.
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