A method of forming either a gate pattern or a line pattern in a resist by using a dark field mask and a combination of a negative photoresist and a positive photoresist. The dark field mask is used to create a hole within the positive photoresist, by exposing only a portion of the positive photoresist to light, and then by subjecting the positive photoresist to a developer. The negative photoresist is formed within the hole of the positive photoresist, and etched or polished so that it is only disposed within the hole. The negative photoresist and the positive photoresist are subjected to a flood light exposure, and then to a developer. This causes the positive photoresist to dissolve, leaving the negative photoresist, thereby providing a very-small-dimension resist pattern that can be used to form either a gate or a line for a semiconductor device.