发明授权
- 专利标题： DRAM capacitor formulation using a double-sided electrode
- 专利标题（中）： DRAM电容器配方采用双面电极
-
申请号： US09415213申请日： 1999-10-12
-
公开(公告)号： US06451661B1公开(公告)日： 2002-09-17
- 发明人: Scott J. DeBoer , Husam Al-Shareef , Randhir Thakur
- 申请人： Scott J. DeBoer , Husam Al-Shareef , Randhir Thakur
- 主分类号： H01L2120
- IPC分类号： H01L2120
摘要：
A capacitor having a double sided electrode for enhanced capacitance. In one embodiment, the double sided electrode capacitor is a stacked container capacitor used in a dynamic random access memory circuit. The double sided electrode is preferably formed of a conductive metal, provided that an oxide of the metal is conductive. The double sided electrode capacitor provides a capacitor that has high storage capacitance which provides an increased efficiency for a cell without an increase in the size of the cell.
信息查询
