公开(公告)号：US06451661B1

公开(公告)日：2002-09-17

申请号：US09415213

申请日：1999-10-12

申请人： Scott J. DeBoer ,  Husam Al-Shareef ,  Randhir Thakur

发明人： Scott J. DeBoer ,  Husam Al-Shareef ,  Randhir Thakur

IPC分类号： H01L2120

CPC分类号： H01L27/10852 ,  H01L21/31604 ,  H01L27/10811 ,  H01L27/10888 ,  H01L28/55 ,  H01L28/91

摘要： A capacitor having a double sided electrode for enhanced capacitance. In one embodiment, the double sided electrode capacitor is a stacked container capacitor used in a dynamic random access memory circuit. The double sided electrode is preferably formed of a conductive metal, provided that an oxide of the metal is conductive. The double sided electrode capacitor provides a capacitor that has high storage capacitance which provides an increased efficiency for a cell without an increase in the size of the cell.

摘要翻译： 具有用于增强电容的双面电极的电容器。 在一个实施例中，双面电极电容器是用于动态随机存取存储器电路中的层叠容器电容器。 双面电极优选由导电金属形成，只要金属的氧化物是导电的。 双面电极电容器提供具有高存储电容的电容器，其在不增加电池尺寸的情况下为电池提供增加的效率。

公开(公告)号：US06737696B1

公开(公告)日：2004-05-18

申请号：US09089445

申请日：1998-06-03

申请人： Scott J. DeBoer ,  Husam Al-Shareef ,  Randhir Thakur

发明人： Scott J. DeBoer ,  Husam Al-Shareef ,  Randhir Thakur

IPC分类号： H01L27108

CPC分类号： H01L27/10852 ,  H01L21/31604 ,  H01L27/10811 ,  H01L27/10888 ,  H01L28/55 ,  H01L28/91

摘要： A capacitor having a double sided electrode for enhanced capacitance. In one embodiment, the double sided electrode capacitor is a stacked container capacitor used in a dynamic random access memory circuit. The double sided electrode is preferably formed of a conductive metal, provided that an oxide of the metal is conductive. The double sided electrode capacitor provides a capacitor that has high storage capacitance which provides an increased efficiency for a cell without an increase in the size of the cell.

摘要翻译： 具有用于增强电容的双面电极的电容器。 在一个实施例中，双面电极电容器是用于动态随机存取存储器电路中的层叠容器电容器。 双面电极优选由导电金属形成，只要金属的氧化物是导电的。 双面电极电容器提供具有高存储电容的电容器，其在不增加电池尺寸的情况下为电池提供增加的效率。

公开(公告)号：US06635547B2

公开(公告)日：2003-10-21

申请号：US09930961

申请日：2001-08-17

申请人： Scott J. DeBoer ,  Husam Al-Shareef ,  Randhir Thakur

发明人： Scott J. DeBoer ,  Husam Al-Shareef ,  Randhir Thakur

IPC分类号： H01L2120

CPC分类号： H01L27/10852 ,  H01L21/31604 ,  H01L27/10811 ,  H01L27/10888 ,  H01L28/55 ,  H01L28/91

摘要： A capacitor having a double sided electrode for enhanced capacitance. In one embodiment, the double sided electrode capacitor is a stacked container capacitor used in a dynamic random access memory circuit. The double sided electrode is preferably formed of a conductive metal, provided that an oxide of the metal is conductive. The double sided electrode capacitor provides a capacitor that has high storage capacitance which provides an increased efficiency for a cell without an increase in the size of the cell.

公开(公告)号：US20050279283A1

公开(公告)日：2005-12-22

申请号：US11210607

申请日：2005-08-23

申请人： F. Gealy ,  Dave Chapek ,  Scott DeBoer ,  Husam Al-Shareef ,  Randhir Thakur

发明人： F. Gealy ,  Dave Chapek ,  Scott DeBoer ,  Husam Al-Shareef ,  Randhir Thakur

IPC分类号： C30B33/00 ,  H01L21/316 ,  C23C16/00 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28202 ,  C30B33/005 ,  H01L21/02183 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/31662 ,  H01L29/518 ,  Y10S438/903

摘要： A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

摘要翻译： 公开了一种在高压氧化炉内的高压氧化阶段防止N 2 O变得超临界的方法和装置。 该方法和装置利用催化剂在进入高压氧化炉时催化分解N 2 O 2。 该催化剂在五个大气压和25个大气压N 2 O 2的温度范围和600℃至750℃的温度范围内使用，这是导致N 2 O超级关键。 通过防止N 2 O 2变得超临界，控制反应以防止温度和压力尖峰。 催化剂可以选自贵金属过渡金属及其氧化物。 该组可以包括钯，铂，铱，铑，镍，银和金。

公开(公告)号：US20050161710A1

公开(公告)日：2005-07-28

申请号：US11073800

申请日：2005-03-07

申请人： Scott DeBoer ,  Husam Al-Shareef ,  Randhir Thakur ,  Dan Gealy

发明人： Scott DeBoer ,  Husam Al-Shareef ,  Randhir Thakur ,  Dan Gealy

IPC分类号： H01L21/02 ,  H01L21/316 ,  H01L21/8242 ,  H01L31/119

CPC分类号： H01L21/02326 ,  G11C17/16 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/31604 ,  H01L21/31637 ,  H01L23/5252 ,  H01L27/10852 ,  H01L27/10861 ,  H01L27/112 ,  H01L27/11206 ,  H01L28/40 ,  H01L28/65 ,  H01L28/84 ,  H01L2924/0002 ,  H01L2924/00

摘要： A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electrode is formed on the tantalum oxynitride film.

公开(公告)号：US20060199311A1

公开(公告)日：2006-09-07

申请号：US11419942

申请日：2006-05-23

申请人： Scott DeBoer ,  Husam Al-Shareef ,  Randhir Thakur ,  Dan Gealy

发明人： Scott DeBoer ,  Husam Al-Shareef ,  Randhir Thakur ,  Dan Gealy

IPC分类号： H01L21/82

CPC分类号： H01L21/02326 ,  G11C17/16 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/31604 ,  H01L21/31637 ,  H01L23/5252 ,  H01L27/10852 ,  H01L27/10861 ,  H01L27/112 ,  H01L27/11206 ,  H01L28/40 ,  H01L28/65 ,  H01L28/84 ,  H01L2924/0002 ,  H01L2924/00

摘要： A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electrode is formed on the tantalum oxynitride film. Embodiments include a method of operating an antifuse, comprising applying a voltage across electrodes of a capacitor having a tantalum oxynitride film and forming a hole in the tantalum oxynitride film.

摘要翻译： 电容器具有氮氧化钽膜。 制造薄膜的一种方法包括形成底板电极，然后在底板电极上形成氧化钽膜。 引入氮气以形成氮氧化钽膜。 在氮氧化钽膜上形成顶板电极。 实施例包括操作反熔丝的方法，包括在具有氮氧化钽膜的电容器的电极上施加电压并在氮氧化钽膜中形成孔。

公开(公告)号：US20060035473A1

公开(公告)日：2006-02-16

申请号：US11251973

申请日：2005-10-17

申请人： F. Gealy ,  Dave Chapek ,  Scott DeBoer ,  Husam Al-Shareef ,  Randhir Thakur

发明人： F. Gealy ,  Dave Chapek ,  Scott DeBoer ,  Husam Al-Shareef ,  Randhir Thakur

IPC分类号： H01L21/31

CPC分类号： H01L21/28202 ,  C30B33/005 ,  H01L21/02183 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/31662 ,  H01L29/518 ,  Y10S438/903

摘要： A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

摘要翻译： 公开了一种在高压氧化炉内的高压氧化阶段防止N 2 O变得超临界的方法和装置。 该方法和装置利用催化剂在进入高压氧化炉时催化分解N 2 O 2。 该催化剂在五个大气压和25个大气压N 2 O 2的温度范围和600℃至750℃的温度范围内使用，这是导致N 2 O超级关键。 通过防止N 2 O 2变得超临界，控制反应以防止温度和压力尖峰。 催化剂可以选自贵金属过渡金属及其氧化物。 该组可以包括钯，铂，铱，铑，镍，银和金。

公开(公告)号：US20070001206A1

公开(公告)日：2007-01-04

申请号：US11499489

申请日：2006-08-03

申请人： Vishnu Agarwal ,  Husam Al-Shareef

发明人： Vishnu Agarwal ,  Husam Al-Shareef

IPC分类号： H01L29/94

CPC分类号： H01L28/56 ,  H01L21/31691 ,  H01L28/55

摘要： The invention comprises capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen. In one embodiment, a capacitor includes first and second conductive electrodes having a high k capacitor dielectric region positioned therebetween. The high k capacitor dielectric region includes a layer of metal oxide having multiple different metals bonded with oxygen. The layer has varying stoichiometry across its thickness. The layer includes an inner region, a middle region, and an outer region. The middle region has a different stoichiometry than both the inner and outer regions.

摘要翻译： 本发明包括具有电容器电介质层的电容器，该电容器电介质层包含具有与氧结合的多个不同金属的金属 在一个实施例中，电容器包括第一和第二导电电极，其间位于其间的高k电容器介电区。 高k电容器电介质区域包括具有多个与氧结合的不同金属的金属氧化物层。 该层在其厚度上具有不同的化学计量。 该层包括内部区域，中间区域和外部区域。 中间区域具有与内部和外部区域不同的化学计量。

公开(公告)号：US20060006450A1

公开(公告)日：2006-01-12

申请号：US11215642

申请日：2005-08-30

申请人： Husam Al-Shareef ,  Vishnu Agarwal

发明人： Husam Al-Shareef ,  Vishnu Agarwal

IPC分类号： H01L27/108

CPC分类号： H01L28/56 ,  H01L21/31691 ,  H01L28/55

摘要： The invention comprises capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen. In one embodiment, a capacitor includes first and second conductive electrodes having a high k capacitor dielectric region positioned therebetween. The high k capacitor dielectric region includes a layer of metal oxide having multiple different metals bonded with oxygen. The layer has varying stoichiometry across its thickness. The layer includes an inner region, a middle region, and an outer region. The middle region has a different stoichiometry than both the inner and outer regions.

摘要翻译： 本发明包括具有电容器电介质层的电容器，该电容器电介质层包含具有与氧结合的多个不同金属的 在一个实施例中，电容器包括第一和第二导电电极，其间位于其间的高k电容器电介质区域。 高k电容器电介质区域包括具有多个与氧结合的不同金属的金属氧化物层。 该层在其厚度上具有不同的化学计量。 该层包括内部区域，中间区域和外部区域。 中间区域具有与内部和外部区域不同的化学计量。

公开(公告)号：US20050048793A1

公开(公告)日：2005-03-03

申请号：US10640309

申请日：2003-08-14

申请人： Ronald Weimer ,  Scott DeBoer ,  Dan Gealy ,  Husam Al-Shareef

发明人： Ronald Weimer ,  Scott DeBoer ,  Dan Gealy ,  Husam Al-Shareef

IPC分类号： H01L21/28 ,  H01L21/3105 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  H01L21/469

CPC分类号： H01L21/3105 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31604 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  Y10S438/901

摘要： A method of fabricating a semiconductor device includes depositing a dielectric film and subjecting the dielectric film to a wet oxidation in a rapid thermal process chamber. The technique can be used, for example, in the formation of various elements in an integrated circuit, including gate dielectric films as well as capacitive elements. The tight temperature control provided by the RTP process allows the wet oxidation to be performed quickly so that the oxidizing species does not diffuse significantly through the dielectric film and diffuse into an underlying layer. In the case of capacitive elements, the technique also can help reduce the leakage current of the dielectric film without significantly reducing its capacitance.

摘要翻译： 制造半导体器件的方法包括沉积电介质膜并使电介质膜在快速热处理室中进行湿氧化。 该技术可以用于例如在集成电路中形成各种元件，包括栅介质膜以及电容元件。 通过RTP工艺提供的紧密温度控制允许快速进行湿氧化，使得氧化物质不会通过电介质膜显着扩散并扩散到下层。 在电容元件的情况下，该技术还可以有助于降低电介质膜的漏电流，而不会显着降低其电容。