Method of forming low-leakage on-chip capacitor

发明授权

US06451662B1 Method of forming low-leakage on-chip capacitor 失效

标题翻译：形成低漏电片上电容器的方法

请登陆查看更多内容

专利标题： Method of forming low-leakage on-chip capacitor
专利标题（中）： 形成低漏电片上电容器的方法
申请号： US09970635

申请日： 2001-10-04
公开(公告)号： US06451662B1

公开(公告)日： 2002-09-17
发明人: Michael Chudzik , Oleg Gluschenkov , Raj Jammy , Uwe Schroeder , Helmut Tews
申请人： Michael Chudzik , Oleg Gluschenkov , Raj Jammy , Uwe Schroeder , Helmut Tews
主分类号： H01L2120
IPC分类号： H01L2120

Method of forming low-leakage on-chip capacitor

摘要：

An improved capacitor is formed by a process where an improved node dielectric layer is formed with an improved dielectric constant by performing an Free Radical Enhanced Rapid Thermal Oxidation (FRE RTO) step during formation of the node dielectric layer. Use of an FRE RTO step instead of the conventional furnace oxidation step produces a cleaner oxide with a higher dielectric constant and higher capacitance. Other specific embodiments of the invention include improved node dielectric layer by one or more additional nitridation steps, done by either Remote Plasma Nitridation (RPN), Rapid Thermal Nitridation (RTN), Decoupled Plasma Nitridation (DPN) or other nitridation method; selective oxidation; use of a metal layer rather than a SiN layer as the dielectric base; and selective oxidation of the metal layer.

摘要（中）：

通过在形成节点介质层期间通过执行自由基增强快速热氧化（FRE RTO）步骤而改进的介电常数形成改进的节点电介质层的工艺形成改进的电容器。使用FRE RTO步骤代替常规炉氧化步骤产生具有更高介电常数和较高电容的清洁氧化物。本发明的其它具体实施方案包括通过远程等离子体氮化（RPN），快速热氮化（RTN），去耦等离子体氮化（DPN）或其它氮化方法进行的一个或多个另外的氮化步骤改进的节点电介质层; 选择性氧化; 使用金属层而不是SiN层作为电介质基底; 和金属层的选择性氧化。

信息查询

Espacenet