发明授权
US06452117B2 Method for filling high aspect ratio via holes in electronic substrates and the resulting holes
失效
用于通过电子基板中的孔填充高纵横比的方法和由此产生的孔
- 专利标题： Method for filling high aspect ratio via holes in electronic substrates and the resulting holes
- 专利标题（中）： 用于通过电子基板中的孔填充高纵横比的方法和由此产生的孔
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申请号： US09871555申请日： 2001-05-31
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公开(公告)号： US06452117B2公开(公告)日： 2002-09-17
- 发明人: Brian Eugene Curcio , Peter Alfred Gruber , Frederic Maurer , Konstantinos I. Papathomas , Mark David Poliks
- 申请人： Brian Eugene Curcio , Peter Alfred Gruber , Frederic Maurer , Konstantinos I. Papathomas , Mark David Poliks
- 主分类号： H01R1204
- IPC分类号： H01R1204
摘要：
High aspect ratio (5:1-30:1) and small (5 &mgr;m-125 &mgr;m) diameter holes in a dielectric substrate are provided, which are filled with a solidified conductive material, as well as a method of filling such holes using pressure and vacuum. In certain embodiments, the holes are lined with conductive material and/or capped with a conductive material. The invention also contemplates a chip carrier formed by such material.
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