发明授权
- 专利标题: X-ray exposure apparatus
- 专利标题(中): X射线曝光装置
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申请号: US09853712申请日: 2001-05-14
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公开(公告)号: US06453001B2公开(公告)日: 2002-09-17
- 发明人: Yutaka Watanabe , Mitsuaki Amemiya
- 申请人: Yutaka Watanabe , Mitsuaki Amemiya
- 优先权: JP2000-148832 20000519
- 主分类号: H01L2130
- IPC分类号: H01L2130
摘要:
An X-ray exposure apparatus has a plasma X-ray source for generating X-rays by producing a plasma, and a collimator for converging X-rays that diverge from the X-ray source and reducing a global divergence angle to irradiate a mask with the X-rays. A local convergence angle as seen from one point on the mask is changed by moving the position or angle of the collimator in a direction perpendicular or parallel to the axis of the collimator. The pattern on the mask is transferred to a wafer using X-rays having a convergence angle thus controlled. As a result, controllable parameters are increased and a more suitable resist pattern can be obtained. In addition, process tolerance in terms of exposing finer patterns is improved.
公开/授权文献
- US20010043666A1 X-ray exposure apparatus 公开/授权日:2001-11-22
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