发明授权
- 专利标题: Process flow for sacrificial collar with poly mask
- 专利标题(中): 具有聚面罩的牺牲套管的工艺流程
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申请号: US09940761申请日: 2001-08-27
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公开(公告)号: US06458647B1公开(公告)日: 2002-10-01
- 发明人: Helmut Horst Tews , Stephan Kudelka , Irene McStay
- 申请人: Helmut Horst Tews , Stephan Kudelka , Irene McStay
- 主分类号: H01L218242
- IPC分类号: H01L218242
摘要:
A process for forming a sacrificial collar (116) on the top portion of a deep trench (114). A nitride layer (116) is deposited within the trench (114). A semiconductor layer (120) is deposited over the nitride layer (116). A top portion of the semiconductor layer (120) is doped to form doped semiconductor layer (124). Undoped portions (120) of the semiconductor layer are removed, and the doped semiconductor layer (124) is used to pattern the nitride layer (116), removing the lower portion of nitride layer (116) from within deep trenches (114) and leaving a sacrificial collar (116) at the top of the trenches (114).
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