发明授权
- 专利标题： Methods of forming capacitor-over-bit line memory cells
- 专利标题（中）： 形成电容器对位线存储单元的方法
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申请号： US09360349申请日： 1999-07-22
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公开(公告)号： US06458649B1公开(公告)日： 2002-10-01
- 发明人: John K. Zahurak , Kunal R. Parekh , Mark Fischer
- 申请人： John K. Zahurak , Kunal R. Parekh , Mark Fischer
- 主分类号： H01L218242
- IPC分类号： H01L218242
摘要：
Methods of forming capacitor-over-bit line memory cells are described. In one embodiment, a bit line contact opening is etched through conductive bit line material. In one implementation, a bit line contact opening is etched through a previously-formed bit line. In one implementation, a bit line contact opening is etched after forming a bit line.
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