Invention Grant
- Patent Title: Controlled-stress stable metallization for electronic and electromechanical devices
- Patent Title (中): 电子和机电设备的受控应力稳定金属化
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Application No.: US09908112Application Date: 2001-07-17
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Publication No.: US06458698B2Publication Date: 2002-10-01
- Inventor: Ilan Golecki , Margaret Eagan
- Applicant: Ilan Golecki , Margaret Eagan
- Main IPC: H01L2144
- IPC: H01L2144

Abstract:
A method of forming a thin film metallization layer having a predetermined residual stress and a predetermined sheet resistance and force measuring devices formed using the methods.
Public/Granted literature
- US20010049193A1 Controlled-stress stable metallization for electronic and electromechanical devices Public/Granted day:2001-12-06
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