Invention Grant
- Patent Title: Method of forming resistor with adhesion layer for electron emission device
- Patent Title (中): 形成电子发射装置的方法
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Application No.: US09888125Application Date: 2001-06-22
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Publication No.: US06461211B2Publication Date: 2002-10-08
- Inventor: Kanwal K. Raina , Ammar Derraa
- Applicant: Kanwal K. Raina , Ammar Derraa
- Main IPC: H01J924
- IPC: H01J924

Abstract:
In one aspect, an electron emission device comprises a substrate, and a first layer supported by the substrate. The first layer comprises a conductive material. The electron emission display device further comprises an electron emission tip electrically connected with the first layer, and a second layer electrically disposed between the first layer and the electron emission tip. The second layer comprises microcrystalline silicon. In another aspect, the invention encompasses a method of forming an electron emission device. A substrate is provided, and a conductive layer is formed over the substrate. A microcrystalline-silicon-containing layer is formed over the conductive layer, and a resistor layer is formed over the microcrystalline-silicon-containing layer. An emitter tip is formed over the resistor layer. In yet other aspects, the invention encompasses field emission display devices, and methods of forming field emission display devices.
Public/Granted literature
- US20010035706A1 Methods of forming electron emission devices Public/Granted day:2001-11-01
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