公开(公告)号：US07268481B2

公开(公告)日：2007-09-11

申请号：US10931516

申请日：2004-09-01

申请人： Kanwal K. Raina

发明人： Kanwal K. Raina

IPC分类号： H01J1/62 ,  H01J1/304

CPC分类号： H01J3/022

摘要： This invention provides a conductive aluminum film and method of forming the same, wherein a non-conductive impurity is incorporated into the aluminum film. In one embodiment, the introduction of nitrogen creates an aluminum nitride subphase which pins down hillocks in the aluminum film to maintain a substantially smooth surface. The film remains substantially hillock-free even after subsequent thermal processing. The aluminum nitride subphase causes only a nominal increase in resistivity (resistivities remain below about 12 μΩ-cm), thereby making the film suitable as an electrically conductive layer for integrated circuit or display devices.

摘要翻译： 本发明提供一种导电铝膜及其形成方法，其中非导电杂质掺入铝膜中。 在一个实施方案中，引入氮产生氮化铝亚相，其将铝膜中的小丘钉下来以保持基本平滑的表面。 即使在后续的热处理之后，该膜仍然基本上无小丘状。 氮化铝次相仅导致电阻率的标称增加（电阻率保持在约12μΩ-cm以下），从而使得该膜适合作为用于集成电路或显示器件的导电层。

公开(公告)号：US07161211B2

公开(公告)日：2007-01-09

申请号：US10289550

申请日：2002-11-06

申请人： Kanwal K. Raina ,  David H. Wells

发明人： Kanwal K. Raina ,  David H. Wells

IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/392 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L21/2855 ,  C23C14/0057 ,  C23C14/185 ,  H01L21/32051 ,  H01L29/458 ,  H01L29/4908 ,  Y10S438/937 ,  Y10T428/12229

摘要： Aluminum-containing films having an oxygen content within the films. The aluminum-containing film is formed by introducing hydrogen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate. The aluminum-containing film so formed is hillock-free and has low resistivity, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress.

摘要翻译： 含有膜的含氧膜含铝。 在铝或铝合金溅射沉积到半导体衬底上时，通过将氢气与氩气一起引入溅射沉积真空室中形成含铝膜。 这样形成的含铝膜与纯铝相比具有低电阻率，较低的粗糙度，良好的机械强度和较低的残余应力。

公开(公告)号：US06831403B2

公开(公告)日：2004-12-14

申请号：US10327485

申请日：2002-12-20

申请人： Behnam Moradi ,  Kanwal K. Raina ,  Michael J. Westphal

发明人： Behnam Moradi ,  Kanwal K. Raina ,  Michael J. Westphal

IPC分类号： H01J162

CPC分类号： H01J9/025 ,  H01J2329/00

摘要： Improved field emission display includes a buffer layer of copper, aluminum, silicon nitride or doped or undoped amorphous, poly, or microcrystalline silicon located between a chromium gate electrode and associated dielectric layer in a cathode assembly. The buffer layer substantially reduces or eliminates the occurrence of an adverse chemical reaction between the chromium gate electrode and dielectric layer.

摘要翻译： 改进的场致发射显示器包括位于阴极组件中的铬栅电极和相关介电层之间的铜，铝，氮化硅或掺杂或未掺杂的非晶，多晶或微晶硅的缓冲层。 缓冲层基本上减少或消除了铬栅电极和电介质层之间不利的化学反应的发生。

公开(公告)号：US06440505B1

公开(公告)日：2002-08-27

申请号：US09707441

申请日：2000-11-06

申请人： Kanwal K. Raina

发明人： Kanwal K. Raina

IPC分类号： C23C1634

CPC分类号： C03C17/225 ,  C03C23/008 ,  C03C2217/281 ,  C03C2218/152 ,  C03C2218/31 ,  C23C16/0227 ,  C23C16/345 ,  H01J9/241 ,  H01J2201/304 ,  H01J2329/00

摘要： The invention includes methods of treating sodalime glass surfaces for deposition of silicon nitride and methods of forming field emission display devices. In one aspect, the invention includes a method of treating a sodalime glass surface for deposition of silicon nitride comprising: a) cleaning a surface of the glass with detergent; and b) contacting the cleaned surface with a solution comprising a strong oxidant to remove non-silicon-dioxide materials from the surface and from a zone underlying and proximate the surface. In another aspect, the invention includes a method of treating a sodalime glass surface region for deposition of silicon nitride comprising: a) providing a sodalime glass surface region having a first concentration of an undesired chemical; b) contacting the sodalime glass surface region with a detergent solution; c) agitating the detergent solution across the sodalime glass surface region; d) removing the detergent solution from the surface region; e) after removing the detergent solution, contacting the sodalime glass surface region with a sulfuric acid solution; and f) removing the sulfuric acid solution from the sodalime glass surface region; wherein, after removing the sulfuric acid solution, the sodalime glass surface region comprises less than the first concentration of the undesired chemical.

摘要翻译： 本发明包括处理用于沉积氮化硅的钠钙玻璃表面的方法和形成场致发射显示装置的方法。 一方面，本发明包括一种处理含钠玻璃表面以沉积氮化硅的方法，包括：a）用洗涤剂清洗玻璃表面; 和b）使清洁的表面与包含强氧化剂的溶液接触，以从表面和下表面附近的区域除去非二氧化硅材料。 另一方面，本发明包括一种处理用于沉积氮化硅的钠钙玻璃表面区域的方法，包括：a）提供具有不期望化学品的第一浓度的钠钙玻璃表面区域; b）将钠钙玻璃表面区域与洗涤剂溶液接触; c）在洗涤玻璃表面区域搅拌洗涤剂溶液; d）从表面区域去除洗涤剂溶液; e）除去洗涤剂溶液后，将钠钙玻璃表面区域与硫酸溶液接触; 和f）从钠钙玻璃表面区域除去硫酸溶液; 其中，在去除硫酸溶液之后，钠钙玻璃表面区域包含小于不需要的化学品的第一浓度。

公开(公告)号：US06211608B1

公开(公告)日：2001-04-03

申请号：US09096085

申请日：1998-06-11

申请人： Kanwal K. Raina ,  James J. Alwan

发明人： Kanwal K. Raina ,  James J. Alwan

IPC分类号： H01J102

CPC分类号： H01J1/3044 ,  H01J31/127 ,  H01J2201/30403

摘要： A field emission device is disclosed having a buffer layer positioned between an underlying cathode conductive layer and an overlying resistor layer. The buffer layer consists of substantially undoped amorphous silicon. Any pinhole defects or discontinuities that extend through the resistor layer terminate at the buffer layer, thereby preventing the problems otherwise caused by pinhole defects. In particular, the buffer layer prevents breakdown of the resistor layer, thereby reducing the possibility of short circuiting. The buffer layer further reduces the risk of delamination of various layers or other irregularities arising from subsequent processing steps. Also disclosed are methods of making and using the field emission device having the buffer layer.

摘要翻译： 公开了一种场致发射器件，其具有位于下面的阴极导电层和上覆电阻层之间的缓冲层。 缓冲层由基本上未掺杂的非晶硅组成。 延伸通过电阻层的任何针孔缺陷或不连续性终止于缓冲层，从而防止由针孔缺陷引起的问题。 特别地，缓冲层防止了电阻层的破坏，从而降低了短路的可能性。 缓冲层进一步降低了由后续处理步骤引起的各种层的分层或其它不规则的风险。 还公开了制造和使用具有缓冲层的场致发射器件的方法。

公开(公告)号：US6165568A

公开(公告)日：2000-12-26

申请号：US23661

申请日：1998-02-09

申请人： Kanwal K. Raina

发明人： Kanwal K. Raina

IPC分类号： C03C17/22 ,  C03C23/00 ,  C23C16/02 ,  C23C16/34 ,  H01J9/24

CPC分类号： C03C17/225 ,  C03C23/008 ,  C03C2217/281 ,  C03C2218/152 ,  C03C2218/31 ,  C23C16/0227 ,  C23C16/345 ,  H01J9/241 ,  H01J2201/304 ,  H01J2329/00

摘要： The invention includes methods of treating sodalime glass surfaces for deposition of silicon nitride and methods of forming field emission display devices. In one aspect, the invention includes a method of treating a sodalime glass surface for deposition of silicon nitride comprising: a) cleaning a surface of the glass with detergent; and b) contacting the cleaned surface with a solution comprising a strong oxidant to remove non-silicon-dioxide materials from the surface and from a zone underlying and proximate the surface. In another aspect, the invention includes a method of treating a sodalime glass surface region for deposition of silicon nitride comprising: a) providing a sodalime glass surface region having a first concentration of an undesired chemical; b) contacting the sodalime glass surface region with a detergent solution; c) agitating the detergent solution across the sodalime glass surface region; d) removing the detergent solution from the surface region; e) after removing the detergent solution, contacting the sodalime glass surface region with a sulfuric acid solution; and f) removing the sulfuric acid solution from the sodalime glass surface region; wherein, after removing the sulfuric acid solution, the sodalime glass surface region comprises less than the first concentration of the undesired chemical.

公开(公告)号：US07239075B2

公开(公告)日：2007-07-03

申请号：US11416338

申请日：2006-05-02

申请人： Kanwal K. Raina ,  Benham Moradi

发明人： Kanwal K. Raina ,  Benham Moradi

IPC分类号： H01J19/02

CPC分类号： H01J1/30 ,  H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/00

摘要： Described herein is a resistor layer for use in field emission display devices and the like, and its method of manufacture. The resistor layer is an amorphous silicon layer doped with nitrogen and phosphorus. Nitrogen concentration in the resistor layer is preferably between about 5 and 15 atomic percent. The presence of nitrogen and phosphorus in the silicon prevents diffusion of Si atoms into metal conductive layers such as aluminum, even up to diffusion and packaging temperatures. The nitrogen and phosphorus also prevent defects from forming at the boundary between the resistor layer and metal conductor. This leads to better control over shorting and improved resistivity in the resistor.

摘要翻译： 这里描述的是用于场发射显示装置等的电阻层及其制造方法。 电阻层是掺杂有氮和磷的非晶硅层。 电阻层中的氮浓度优选为约5至15原子％。 硅中的氮和磷的存在防止Si原子扩散到金属导电层如铝中，甚至达到扩散和封装温度。 氮和磷还可以防止在电阻层和金属导体之间的边界处形成缺陷。 这导致更好地控制电阻器的短路和改善电阻率。

公开(公告)号：US07101586B2

公开(公告)日：2006-09-05

申请号：US10120511

申请日：2002-04-12

申请人： Kanwal K. Raina

发明人： Kanwal K. Raina

IPC分类号： B05D5/12 ,  B05D5/06

CPC分类号： H01J9/025

摘要： A system and method for fabricating a FED device is disclosed. The system and method provide for use of PECVD hydrogenation followed by nitrogen plasma treatment of the tip of the current emitter of the FED device. The use of this process greatly reduces the native oxides in the tip of the current emitter. Such native oxides function as undesirable insulators degrading current emission. By reducing the amount of oxides in the tip, this invention provides for an increase in the current emission of the FED device.

公开(公告)号：US06657376B1

公开(公告)日：2003-12-02

申请号：US09323557

申请日：1999-06-01

申请人： Kanwal K. Raina ,  Ammar Derraa

发明人： Kanwal K. Raina ,  Ammar Derraa

IPC分类号： H01J162

CPC分类号： H01J1/3044 ,  H01J9/025

摘要： In one aspect, an electron emission device comprises a substrate, and a first layer supported by the substrate. The first layer comprises a conductive material. The electron emission display device further comprises an electron emission tip electrically connected with the first layer, and a second layer electrically disposed between the first layer and the electron emission tip. The second layer comprises microcrystalline silicon. In another aspect, the invention encompasses a method of forming an electron emission device. A substrate is provided, and a conductive layer is formed over the substrate. A microcrystalline-silicon-containing layer is formed over the conductive layer, and a resistor layer is formed over the microcrystalline-silicon-containing layer. An emitter tip is formed over the resistor layer. In yet other aspects, the invention encompasses field emission display devices, and methods of forming field emission display devices.

摘要翻译： 一方面，电子发射器件包括衬底和由衬底支撑的第一层。 第一层包括导电材料。 电子发射显示装置还包括与第一层电连接的电子发射尖端，以及电气设置在第一层和电子发射尖端之间的第二层。 第二层包括微晶硅。 另一方面，本发明包括形成电子发射装置的方法。 提供衬底，并且在衬底上形成导电层。 在导电层上形成微晶硅层，在微晶硅层上形成电阻层。 发射极尖端形成在电阻层上。 在其它方面，本发明包括场发射显示装置，以及形成场致发射显示装置的方法。

公开(公告)号：US06348403B1

公开(公告)日：2002-02-19

申请号：US09652423

申请日：2000-08-31

申请人： Kanwal K. Raina ,  Tianhong Zhang ,  Allen McTeer

发明人： Kanwal K. Raina ,  Tianhong Zhang ,  Allen McTeer

IPC分类号： H01L214763

CPC分类号： H01L21/7685 ,  H01J1/3044 ,  H01J9/025 ,  H01L21/32051 ,  H01L21/76864 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： A multilayer structure is provided which suppresses hillock formation due to post-heat treatment steps in thin aluminum films deposited on other substrates by sandwiching the aluminum film between thin layers of aluminum titanium nitride. The first aluminum titanium nitride layer acts as a compatibilizing layer to provide a better match between the coefficients of thermal expansion of the substrate and aluminum metal layer. The second aluminum titanium nitride layer acts as a cap layer to suppress hillock formation.

摘要翻译： 提供了一种多层结构，其通过将铝膜夹在铝氮化钛薄层之间，通过在其它基板上沉积的薄铝膜中的后热处理步骤来抑制小丘形成。 第一铝氮化钛层用作增容层，以提供基板和铝金属层的热膨胀系数之间更好的匹配。 第二铝氮化钛层用作盖层以抑制小丘形成。