发明授权
US06461776B1 Resist pattern forming method using anti-reflective layer, with variable extinction coefficient 有权
抗蚀图案形成方法采用抗反射层,具有可变消光系数

  • 专利标题: Resist pattern forming method using anti-reflective layer, with variable extinction coefficient
  • 专利标题(中): 抗蚀图案形成方法采用抗反射层,具有可变消光系数
  • 申请号: US10054932
    申请日: 2002-01-25
  • 公开(公告)号: US06461776B1
    公开(公告)日: 2002-10-08
  • 发明人: Toshihiko TanakaShoichi UchinoNaoko Asai
  • 申请人: Toshihiko TanakaShoichi UchinoNaoko Asai
  • 优先权: JP7-030425 19950220; JP7-033313 19950222; JP7-122150 19950522
  • 主分类号: G03F900
  • IPC分类号: G03F900
Resist pattern forming method using anti-reflective layer, with variable extinction coefficient
摘要:
Disclosed are methods for forming a resist pattern which solve a problem caused by halation and interference phenomena due to reflected light from the substrate. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper interference film for the exposure light and a lower film having higher exposure light absorbance than the upper film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower film that reflects exposure light and an upper film that is an interference film for the exposure light.
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