发明授权
US06465273B1 Method of making ZnSe based light emitting device with in layer using vibration and pressure
失效
使用振动和压力制备具有内层的ZnSe基发光器件的方法
- 专利标题： Method of making ZnSe based light emitting device with in layer using vibration and pressure
- 专利标题（中）： 使用振动和压力制备具有内层的ZnSe基发光器件的方法
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申请号： US09564194申请日： 2000-05-04
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公开(公告)号： US06465273B1公开(公告)日： 2002-10-15
- 发明人: Hideki Matsubara , Koji Katayama , Akihiko Saegusa
- 申请人： Hideki Matsubara , Koji Katayama , Akihiko Saegusa
- 优先权： JP11-132924 19990513; JP2000-112012 20000413
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
A light emitting device includes an LED chip fixed to an electrode body via a conductive layer of In or an In alloy. The conductive layer is in ohmic-contact with an n-type ZnSe crystal substrate of the LED chip. To make the device, In or an In alloy is melted on the electrode body, the ZnSe substrate is placed directly on the melted In or In alloy and then subjected to at least one of vibration and pressure to achieve a good bond and ohmic contact between the In or In alloy and the ZnSe substrate.