发明授权
US06465280B1 In-situ cap and method of fabricating same for an integrated circuit device
有权
用于集成电路器件的原位盖及其制造方法
- 专利标题： In-situ cap and method of fabricating same for an integrated circuit device
- 专利标题（中）： 用于集成电路器件的原位盖及其制造方法
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申请号： US09800821申请日： 2001-03-07
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公开(公告)号： US06465280B1公开(公告)日： 2002-10-15
- 发明人: John R. Martin , Richard H. Morrison, Jr.
- 申请人： John R. Martin , Richard H. Morrison, Jr.
- 主分类号： H01L2176
- IPC分类号： H01L2176
摘要：
An in-situ cap for an integrated circuit device such as a micromachined device and a method of making such a cap by fabricating an integrated circuit element on a substrate; forming a support layer over the integrated circuit element and forming a cap structure in the support layer covering the integrated circuit element.
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