发明授权
- 专利标题： Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
- 专利标题（中）： 使用金属催化剂制造半导体器件和高温结晶的方法
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申请号： US08784292申请日： 1997-01-16
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公开(公告)号： US06465287B1公开(公告)日： 2002-10-15
- 发明人: Shunpei Yamazaki , Satoshi Teramoto , Jun Koyama , Yasushi Ogata , Masahiko Hayakawa , Mitsuaki Osame
- 申请人： Shunpei Yamazaki , Satoshi Teramoto , Jun Koyama , Yasushi Ogata , Masahiko Hayakawa , Mitsuaki Osame
- 优先权： JP8-032981 19960127
- 主分类号： H01L2184
- IPC分类号： H01L2184
摘要：
Concentration of metal element which promotes crystallization of silicon and which exists within a crystalline silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is performed in temperature above 750° C. after introducing elemental nickel to an amorphous silicon film 103 disposed on a quartz substrate 101. Then, after obtaining the crystalline silicon film 105, it is patterned to obtain a pattern 106. Then, another heat treatment is performed within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. A thermal oxide film 107 is formed in this step. At this time, the elemental nickel is gettered to the thermal oxide film 107. Next, the thermal oxide film 107 is removed. Thereby, a crystalline silicon film 106 having low concentration of the metal element and a high crystallinity can be obtained.