发明授权
- 专利标题： Method for producing semiconductor temperature sensor
- 专利标题（中）： 半导体温度传感器的制造方法
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申请号： US09502709申请日： 2000-02-11
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公开(公告)号： US06468825B1公开(公告)日： 2002-10-22
- 发明人: Satoshi Machida , Yukito Kawahara , Kentaro Kuhara , Toru Shimizu , Yoshikazu Kojima
- 申请人： Satoshi Machida , Yukito Kawahara , Kentaro Kuhara , Toru Shimizu , Yoshikazu Kojima
- 优先权： JP7-234463 19950912; JP8-206212 19960805; JP8-208619 19960807; JP8-208620 19960807; JP8-210258 19960808; JP8-223950 19960826; JP8-223952 19960826; JP8-235583 19960905
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
A method for producing a semiconductor temperature sensor comprises the steps of forming PNP bipolar transistors and PMOS transistors so that a base region of each of the PNP bipolar transistors and a corresponding N-well region of each of the PMOS transistors are formed at the same time, and connecting the PNP bipolar transistors in a Darlington connection.