发明授权
US06472334B2 Film forming method, semiconductor device manufacturing method, and semiconductor device
失效
成膜方法，半导体装置的制造方法以及半导体装置
- 专利标题： Film forming method, semiconductor device manufacturing method, and semiconductor device
- 专利标题（中）： 成膜方法，半导体装置的制造方法以及半导体装置
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申请号： US09824106申请日： 2001-04-03
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公开(公告)号： US06472334B2公开(公告)日： 2002-10-29
- 发明人: Hiroshi Ikakura , Tomomi Suzuki , Kazuo Maeda , Yoshimi Shioya , Kouichi Ohira
- 申请人： Hiroshi Ikakura , Tomomi Suzuki , Kazuo Maeda , Yoshimi Shioya , Kouichi Ohira
- 优先权： JP2000-106937 20000407
- 主分类号： H01L21469
- IPC分类号： H01L21469
摘要：
There is provided a method of forming a silicon-containing insulating film on a substrate by reacting a compound having siloxane bonds and Si—R bonds (R is alkyl group) with a plasmanized reaction gas containing an oxidizing gas and H2.
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